Investigation on halide vapor phase epitaxial growth of AlN using N2 as N source

Huang, Jun; Chen, Qi Jia; Niu, Mu; Xu, Ke

doi:10.1016/j.jcrysgro.2020.125567

Cited by 6 publications

(5 citation statements)

References 9 publications

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“…The change of geometric characteristics for macrosteps results in different TDD values. Among all the samples, sample A has the highest TDD value of 7.0 × 10 9 cm –2 , which is close to the average TDD value achieved by the TSG technique. ,− In sharp contrast, the TDD value of sample H is decreased to 1.4 × 10 9 cm –2 , only 20% of the average TDD value. The TDD and thickness values of AlN/sapphire templates achieved by the TSG technique reported in the past few years are shown in Figure for comparison.…”

Section: Resultssupporting

confidence: 58%

Low-Defect-Density Aluminum Nitride (AlN) Thin Films Realized by Zigzag Macrostep-Induced Dislocation Redirection

Jia

et al. 2021

Crystal Growth & Design

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Owing to the lack of large-diameter and affordable AlN bulk crystals, high-quality AlN films grown on sapphire substrates have been intensively analyzed for the potential applications in optoelectronic and electronic devices. Herein, we successfully fabricated low-defect-density AlN thin films on large-offcut-angle sapphire substrates combining magnetron sputtering and metal–organic chemical vapor deposition. It is found that the crystalline qualities of AlN films strongly depend on the densities and geometric features of atomic steps. When high-density zigzag macrosteps are formed on the surface, they can induce dislocation inclination toward multiple directions rather than a single one. In this situation, the inclined dislocations can interact with not only vertical dislocations but also other inclined dislocations. Profiting from the large inclination angles (30–78°), the lateral interaction range of dislocations exhibits a 6-fold increase at most, leading to more frequent dislocation interactions within a relatively thin layer. As a result, the threading dislocation density value of 1 μm thick AlN is reduced down to 1.4 × 109 cm–2, demonstrating an 80% decrease in comparison with its counterpart without the macrostep-induced dislocation redirection effect. This approach is expected to boost the development of low-cost and high-performance devices on AlN/sapphire templates.

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Section: Resultssupporting

confidence: 58%

Low-Defect-Density Aluminum Nitride (AlN) Thin Films Realized by Zigzag Macrostep-Induced Dislocation Redirection

Jia

et al. 2021

Crystal Growth & Design

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“…In order to characterize the dislocation annihilation in the AlN films more directly, further analysis was carried out by dark-field cross-sectional TEM. As shown in Figure 6, the samples were tilted to obtain two-beam conditions with g ¼ [0002] for STDs observation and g ¼ [11][12][13][14][15][16][17][18][19][20] for ETDs observation. As shown in Figure 6a, the STDs annihilate almost at the AlN thickness of 300 nm which may be associated with the transition of compressive stress to tensile stress, and the STDs annihilate just after the nucleation layer in 3D mode as shown in Figure 6c and almost no TDs extend into the upperlayer.…”

Section: Resultsmentioning

confidence: 99%

“…So far, AlN growth on sapphire substrate has been realized by many techniques, such as metal-organic chemical vapor deposition (MOCVD), [11][12][13][14][15] molecular beam epitaxy, [16,17] hydride vapor phase epitaxy, [18,19] and sputtering deposition. [20,21] Among these methods, MOCVD is often preferred due to the proper crystalline quality, acceptable growth rate, and massive yield ability.…”

Section: Introductionmentioning

confidence: 99%

Effect of V–III Ratio‐Based Growth Mode on the Surface Morphology, Strain Relaxation, and Dislocation Density of AlN Films Grown by Metal‐Organic Chemical Vapor Deposition

Zhang

Deng

et al. 2022

Physica Status Solidi (b)

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Herein, regulation of the growth mode through manipulating the V–III ratio during metal‐organic chemical vapor deposition (MOCVD) growth of AlN films on c‐plane sapphire substrates and optimization of the crystalline quality and surface morphology of AlN films are demonstrated. Based on detailed analyses of the evolution process of surface morphology, dislocation annihilation, and stress state of the AlN film during MOCVD growth, it is found that 2D rather than 3D growth mode introduces tensile stress as well as promotes edge‐type threading dislocation (ETD) propagation and crack generation, while 3D growth mode produces rough surface. These results would help to further understand the AlN growth mechanism and provide important guidance on the preparation of AlN‐related epitaxial structure.

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“…In another word, high V/III growth would deteriorate the surface morphology and make the coalescence growth of AlN film become more difficult. [10] (a) (b) Figure 3 shows normalized Raman spectra of the E 2 (high) phonon mode for all the samples. The vertical line shows the stress-free frequency of 657.4 cm −1 .…”

Section: Resultsmentioning

confidence: 99%

Porous AlN films grown on C-face SiC by hydride vapor phase epitaxy

Chen¹,

Huang²,

Li³

et al. 2022

Chinese Phys. B

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We report the growth of porous AlN films on C-face SiC substrates by hydride vapor phase epitaxy (HVPE). The influences of growth condition on surface morphology, residual strain and crystalline quality of AlN films have been investigated. With the increasing of V/III ratio, the growth mode of AlN grown on C-face 6H-SiC substrates changes from step-flow to pit-hole morphology. AFM, SEM and Raman analysis show that cracks appeared due to tensile stress in the films with the lowest V/III ratio and the highest V/III ratio with a thickness of about 3 μm. In contrast, under the medium V/III ratio growth condition, the porous film can be obtained. Even when the thickness of the porous AlN film is further increased to 8 μm, the film remains porous and crack-free, and the crystal quality is improved.

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Investigation on halide vapor phase epitaxial growth of AlN using N2 as N source

Cited by 6 publications

References 9 publications

Low-Defect-Density Aluminum Nitride (AlN) Thin Films Realized by Zigzag Macrostep-Induced Dislocation Redirection

Low-Defect-Density Aluminum Nitride (AlN) Thin Films Realized by Zigzag Macrostep-Induced Dislocation Redirection

Effect of V–III Ratio‐Based Growth Mode on the Surface Morphology, Strain Relaxation, and Dislocation Density of AlN Films Grown by Metal‐Organic Chemical Vapor Deposition

Porous AlN films grown on C-face SiC by hydride vapor phase epitaxy

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