Investigation on growth, structural, optical, electrical and X-ray sensing properties of chemically deposited zinc bismuth sulfide (ZnxBi2−xS3) thin films

Sabarish, R.; Suriyanarayanan, N.; Kalita, J.M.; Sarma, M.P.; Wary, G.

doi:10.1088/2053-1591/aac1dc

Cited by 4 publications

(2 citation statements)

References 47 publications

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“…Lattice factors “ a , b , and c ”, unit cell volume “ V cell ”, Scherrer crystallite size “ D ” [ 44 ], X-ray density “ ρ X-ray ” dislocation density

and microstrain

were calculated using Equations (1)–(6).

where β is the full width at half maximum intensity, λ is the X-ray wavelength and is equal to 0.15406 nm, θ is Bragg’s angle, k is the constant equal to 0.94, Z is the number of molecules per formula unit, and M is the molar mass.…”

Section: Resultsmentioning

confidence: 99%

Improvement in Optoelectronic Properties of Bismuth Sulphide Thin Films by Chromium Incorporation at the Orthorhombic Crystal Lattice for Photovoltaic Applications

et al. 2022

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By using the chemical bath deposition approach, binary bismuth sulphides (Bi2S3) and chromium-doped ternary bismuth sulphides (Bi2−xCrxS3) thin films were effectively produced, and their potential for photovoltaic applications was examined. Structural elucidation revealed that Bi2S3 deposited by this simple and cost-effective method retained its orthorhombic crystal lattice by doping up to 3 at.%. The morphological analysis confirmed the crack-free deposition, hence making them suitable for solar cell applications. Optical analysis showed that deposited thin films have a bandgap in the range of 1.30 to 1.17 eV, values of refractive index (n) from 2.9 to 1.3, and an extinction coefficient (k) from 1.03 to 0.3. From the Hall measurements, it followed that the dominant carriers in all doped and undoped samples are electrons, and the carrier density in doped samples is almost two orders of magnitude larger than in Bi2S3. Hence, this suggests that doping is an effective tool to improve the optoelectronic behavior of Bi2S3 thin films by engineering the compositional, structural, and morphological properties.

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“…Lattice factors “ a , b , and c ”, unit cell volume “ V cell ”, Scherrer crystallite size “ D ” [ 44 ], X-ray density “ ρ X-ray ” dislocation density

and microstrain

were calculated using Equations (1)–(6).

Section: Resultsmentioning

confidence: 99%

Improvement in Optoelectronic Properties of Bismuth Sulphide Thin Films by Chromium Incorporation at the Orthorhombic Crystal Lattice for Photovoltaic Applications

et al. 2022

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“…Electrical conductivity depends on the year for Bi 2 S 3 -based thin films, which were prepared for different methods (CBD refers to chemical bath deposition; SP refers to spray pyrolysis; CD refers to chemical drop method; ALD refers to atomic layer deposition; EBP refers to electron beam patterned; SILAR refers to successive ionic layer adsorption and reaction; SAMs refers to self-assembled monolayers; NRs refers to nanorods, NWs refers to nanowires, The literature points correspond to data in refs , , − , , , and − .…”

mentioning

confidence: 99%

Realizing High Electrical Conductivity in Chlorine-Doped Bi₂S₃ Thermoelectric Thin Films via Air Plasma Treatment

Hu,

Zhao,

et al. 2023

ACS Materials Lett.

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The demand for a sustainable power supply and management has become increasingly essential with the rise of Internet of Things (IoT) devices and the associated wireless sensor networks. Inorganic thermoelectric thin films, such as those based on Bi 2 S 3 , are becoming a viable solution to this issue as they are low-toxic, inexpensive, and possess a high Seebeck coefficient and low thermal conductivity. However, they usually suffer from an inherent low electrical conductivity. In this study, we tackled this problem by incorporating Cl into Bi 2 S 3 lattices using a solution process, resulting in a substantial increase in both the conductivity and carrier concentration. Additionally, DFT calculations show that the doping of Cl leads to the formation of a degenerate semiconductor, which increases conductivity. Moreover, a high power factor of 121.88 μW m −1 K −2 was achieved after doping before plasma treatment. Specifically, the Bi 2 S 3 sample doped with 0.5 mmol of BiCl 3 with plasma treatment achieved a remarkable conductivity of 100.72 S cm −1 , among the highest reported for a Bi 2 S 3 -based system, which is attributed to the sharp increase of carrier concentration. This research demonstrates a promising approach for overcoming the inherently low conductivity of Bi 2 S 3 -based thermoelectric thin films to enable them as a viable solution for low-cost power supply in IoT applications.

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Zinc doping effects on the microstructural, electrical and optical properties of nanostructured ZnxBi2-xS3 (0≤x≤0.09) thin films grown by ultrasonic spray pyrolysis

Bouachri

Oubakalla

El-Habib

et al. 2023

Current Applied Physics

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Investigation on growth, structural, optical, electrical and X-ray sensing properties of chemically deposited zinc bismuth sulfide (Zn_xBi_2−xS₃) thin films

Cited by 4 publications

References 47 publications

Improvement in Optoelectronic Properties of Bismuth Sulphide Thin Films by Chromium Incorporation at the Orthorhombic Crystal Lattice for Photovoltaic Applications

Improvement in Optoelectronic Properties of Bismuth Sulphide Thin Films by Chromium Incorporation at the Orthorhombic Crystal Lattice for Photovoltaic Applications

Realizing High Electrical Conductivity in Chlorine-Doped Bi₂S₃ Thermoelectric Thin Films via Air Plasma Treatment

Zinc doping effects on the microstructural, electrical and optical properties of nanostructured ZnxBi2-xS3 (0≤x≤0.09) thin films grown by ultrasonic spray pyrolysis

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Investigation on growth, structural, optical, electrical and X-ray sensing properties of chemically deposited zinc bismuth sulfide (ZnxBi2−xS3) thin films

Cited by 4 publications

References 47 publications

Improvement in Optoelectronic Properties of Bismuth Sulphide Thin Films by Chromium Incorporation at the Orthorhombic Crystal Lattice for Photovoltaic Applications

Improvement in Optoelectronic Properties of Bismuth Sulphide Thin Films by Chromium Incorporation at the Orthorhombic Crystal Lattice for Photovoltaic Applications

Realizing High Electrical Conductivity in Chlorine-Doped Bi2S3 Thermoelectric Thin Films via Air Plasma Treatment

Zinc doping effects on the microstructural, electrical and optical properties of nanostructured ZnxBi2-xS3 (0≤x≤0.09) thin films grown by ultrasonic spray pyrolysis

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Investigation on growth, structural, optical, electrical and X-ray sensing properties of chemically deposited zinc bismuth sulfide (Zn_xBi_2−xS₃) thin films

Realizing High Electrical Conductivity in Chlorine-Doped Bi₂S₃ Thermoelectric Thin Films via Air Plasma Treatment