Investigation on growth related aspects of catalyst-free InP nanowires grown by metal organic chemical vapor deposition

Sheng, Yu; Miao, Guobin; Jin, Yixin; Zhang, Tiemin; Song, Hang; Jiang, Hong; Li, Zhiming; Li, Dabing; Sun, Xiaojuan

doi:10.1016/j.jallcom.2009.01.073

Cited by 4 publications

(2 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The catalyst indium droplets are fabricated by the thermal decomposition of TMIn. For catalyst-free InP nanowire growth, it has been tested in our experiments before that the temperature is in the range of 330 °C to 370 °C [ 17 , 18 ]. In this range, indium droplets can be fabricated [ 19 ].…”

Section: Resultsmentioning

confidence: 99%

Stages in the catalyst-free InP nanowire growth on silicon (100) by metal organic chemical vapor deposition

Miao

Zhang

2012

Nanoscale Res Lett

Self Cite

View full text Add to dashboard Cite

Catalyst-free InP nanowires were grown on Si (100) substrates by low-pressure metal organic chemical vapor deposition. The different stages of nanowire growth were investigated. The scanning electron microscopy images showed that the density of the nanowires increased as the growth continued. Catalyzing indium droplets could still be fabricated in the nanowire growing process. X-ray diffraction showed that the nanowires grown at different stages were single crystalline with <111 > growth direction. The photoluminescence studies carried out at room temperature on InP nanowires reveal that the blueshift of photoluminescence decreased as the growing time accumulates, which is related to the increase in the diameter, rather than the length. Raman spectra for nanowires at different growing stages show that the quality of the nanowire changes. The growth of InP nanowires at different growing stages is demonstrated as a dynamic process.

show abstract

Section: Resultsmentioning

confidence: 99%

Stages in the catalyst-free InP nanowire growth on silicon (100) by metal organic chemical vapor deposition

Miao

Zhang

2012

Nanoscale Res Lett

Self Cite

View full text Add to dashboard Cite

show abstract

“…The empirical temperature dependence of the band gap energy is the result of twinning occurring non-periodically along the nanowire. The InP bulk material's crystal structure is zincblende(ZB),while the InP nanowires is a wurtzite(WZ) and zincblende(ZB) mixed structure [14]. In some regions, there is a long ZB-InP-rich segment of the structure, due to the large spacing between twin planes, while in other regions, there is a WZ-InP-rich segment because of closely spaced twin planes.…”

Section: Resultsmentioning

confidence: 99%

Effect of Substrate Orientation and PH<sub>3</sub> Thermal Annealing Treatment on Catalyst-Free InP Nanowires

Guo

Zhang

2013

AMR

View full text Add to dashboard Cite

Catalyst-free InP nanowires were grown on Si (100) and Si (111) substrates by metal organic chemical vapor deposition and the morphology, crystal structure, and optical properties of the nanowires are investigated. X-ray diffraction results show two peaks of InP (111) and InP (220) in the spectra. Two more peaks of InP (200) and InP (311) are observed if PH3thermal annealing is performed on the sample for 15 minutes after nanowire growth is completed. The InP (220), InP (311), and InP (200) peaks originate from InP crystal formation on top of the nanowires; only the InP (111) peak originates from the InP nanowires. Finally, the temperature dependence of the PL peak positions of InP nanowires grown on Si (100) and InP substrate are measured.

show abstract

Growth and optical properties of catalyst-free InP nanowires on Si (100) substrates

Sheng¹,

Miao²,

Jin³

et al. 2010

Physica E: Low-dimensional Systems and Nanostructures

View full text Add to dashboard Cite

Investigation on growth related aspects of catalyst-free InP nanowires grown by metal organic chemical vapor deposition

Cited by 4 publications

References 29 publications

Stages in the catalyst-free InP nanowire growth on silicon (100) by metal organic chemical vapor deposition

Stages in the catalyst-free InP nanowire growth on silicon (100) by metal organic chemical vapor deposition

Effect of Substrate Orientation and PH<sub>3</sub> Thermal Annealing Treatment on Catalyst-Free InP Nanowires

Growth and optical properties of catalyst-free InP nanowires on Si (100) substrates

Contact Info

Product

Resources

About