Investigation on Fabrication of Nanoscale Patterns Using Laser Interference Lithography

Choi, Jinnil; Chung, Myung Ho; Dong, Ki Young; Park, Eun Mi; Ham, Dae Jin; Park, Yun-Kwon; Song, In Sang; Pak, James Jungho; Ju, Byeong Kwon

doi:10.1166/jnn.2011.3281

Cited by 26 publications

(13 citation statements)

References 3 publications

(3 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The plasma power used was 280 W and the pressure was set to 40 mTorr. Gas flow rates of CF 4 and O 2 were set to 36 and 4 sccm, respectively. As shown in Figure 4, severe erosion of the PMMA nano-pattern was observed and the etch selectivity of the imprinted PMMA resin to Si 3 N 4 was about 0.66.…”

Section: Resultsmentioning

confidence: 99%

Sub 50 nm Nano-Patterns with Carbon Based Spin-On Organic Hardmask

Shin

Yang²,

Han³

et al. 2012

j. nanosci. nanotech.

View full text Add to dashboard Cite

Carbon based spin-on organic hardmask (C-SOH) was used as an imprint resin to fabricate sub 50 nm sized patterns. Imprinting of C-SOH was done with a polyurethaneacrylate (PUA) stamp. Patternability and etch resistance of the C-SOH resin was compared to poly(methyl methacrylate) (PMMA). C-SOH can be patterned at the nanosize using imprint lithography and exhibits superior etch resistance, especially for F-based plasmas. Due to the poor etch resistance of imprint resin such as PMMA, it is seldom used as an etch mask to form nano-structures by etching the Si3N4 layer. However, such a nano-structure was able to be formed by etching the Si3N4 layer using C-SOH as an etch mask.

show abstract

Section: Resultsmentioning

confidence: 99%

Sub 50 nm Nano-Patterns with Carbon Based Spin-On Organic Hardmask

Shin

Yang²,

Han³

et al. 2012

j. nanosci. nanotech.

View full text Add to dashboard Cite

show abstract

“…For example, focused ion beam lithography, electron beam lithography, nanoimprint lithography, laser interference lithography, etc., are used in nanosized patterning. [8][9][10][11][12][13][14][15][16][17][18] LIL is a particularly innovative and efficient way to fabricate one-or two-dimensional periodical patterns in a nanolithography technique; it has many attractive characteristics such as high resolution, low cost, large area fabrication, very high throughput, and easily reconfigurable patterns (different periods, sizes, and pattern shapes). [12][13][14] Previously, conventional nanohole OLEDs were made by shape holes using LIL, but viewing angle problems occurred, and EL characteristics were not addressed in detail.…”

Section: Introductionmentioning

confidence: 99%

Micro/Nano-Stripe Organic Light Emitting Diodes Fabricated Using Photolithography and Laser Interference Lithography

You¹,

Joo

Ha³

et al. 2017

nanosci nanotechnol lett

Self Cite

View full text Add to dashboard Cite

We have demonstrated the fabrication of OLEDs with a micro/nano-patterned pixel defining layer (PDL) using photolithography and laser interference lithography (LIL) techniques. Moreover, we have demonstrated the successful fabrication and operation of micro/nano-stripe OLED pixel sizes of 354 nm and 30 m. This novel patterning technique scheme holds many merits such as reduced processing, cost, and limitations of resolution, and it is applicable to the fabrication of large-area displays. We discuss the micro/nano-stripe patterning method and device fabrication and analyze the optical and electrical characteristics of micro/nano-stripe OLEDs.

show abstract

“…Highly integrated device demands more accurate CD (Critical Dimension) control, and high contrast PR (Photoresist) is needed for the exposure threshold effect [1,2], however, the reflectivity between substrate and PR becomes higher. Therefore, the CD swing curve was intensified, which was directly influenced by the change of PR thickness.…”

Section: Introductionmentioning

confidence: 99%

Reflectivity Control at Substrate / Photoresist Interface by Inorganic Bottom Anti-Reflection Coating for Nanometer-scaled Devices

Kim¹,

Kim²

2014

Transactions on Electrical and Electronic Materials

View full text Add to dashboard Cite

More accurate CD (Critical Dimension) control is required for the nanometer-scaled devices. However, since the reflectivity between substrate and PR (Photoresist) becomes higher, the CD (Critical Dimension) swing curve was intensified. The higher reflectivity also causes PR notching due to the pattern of sub-layer. For this device requirement, it was optimized for the thickness, refractive index(n) and absorption coefficient(k) in the bottom anti-reflective coating(BARC; SiON) and photoresist with the minimum reflectivity. The computational simulated conditions, which were determined with the thickness of 33 nm, n of 1.89 and k of 0.369 as the optimum condition, were successfully applied to the experiments with no standing wave for the 0.13um-device. At this condition, the lowest reflectivity was 0.44%. This optimum condition for BARC SiON film was applied to the process for 0.13um-device. The optimum SiON film as BARC to PR and sub-layer could be formed with the accurate CD control and no standing waver for the nanometer-scaled semiconductor manufacturing process.

show abstract

Investigation on Fabrication of Nanoscale Patterns Using Laser Interference Lithography

Cited by 26 publications

References 3 publications

Sub 50 nm Nano-Patterns with Carbon Based Spin-On Organic Hardmask

Sub 50 nm Nano-Patterns with Carbon Based Spin-On Organic Hardmask

Micro/Nano-Stripe Organic Light Emitting Diodes Fabricated Using Photolithography and Laser Interference Lithography

Reflectivity Control at Substrate / Photoresist Interface by Inorganic Bottom Anti-Reflection Coating for Nanometer-scaled Devices

Contact Info

Product

Resources

About