Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications

Mounika, B.; Ajayan, J.; Bhattacharya, Sandip; Nirmal, D.; Sreenivasulu, V. Bharath; Kumari, N. Aruna

doi:10.1016/j.mejo.2023.105923

Microelectronics Journal

2023

DOI: 10.1016/j.mejo.2023.105923

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Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications

B. Mounika,

J. Ajayan,

Sandip Bhattacharya

et al.

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2024

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Cited by 7 publications

References 34 publications

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Exploration on the impact of barrier thickness, gate recess, and lateral scaling on AlGaN/GaN SRL HEMT on silicon for future RF power electronics

Akshaykranth,

Ajayan,

Bhattacharya

et al. 2024

J Mater Sci: Mater Electron

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Exploration on the impact of barrier thickness, gate recess, and lateral scaling on AlGaN/GaN SRL HEMT on silicon for future RF power electronics

Akshaykranth,

Ajayan,

Bhattacharya

et al. 2024

J Mater Sci: Mater Electron

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A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications

Deshpande,

Bhattacharya,

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et al. 2024

J. Electron. Mater.

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A Novel high-voltage DMG Fe-doped AlGaN/AlN/GaN HEMTs with sheet charge density model

Rajalakshmi,

Balamurugan,

Hemalatha

et al. 2024

Microelectronics Journal

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Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications

Cited by 7 publications

References 34 publications

Exploration on the impact of barrier thickness, gate recess, and lateral scaling on AlGaN/GaN SRL HEMT on silicon for future RF power electronics

Exploration on the impact of barrier thickness, gate recess, and lateral scaling on AlGaN/GaN SRL HEMT on silicon for future RF power electronics

A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications

A Novel high-voltage DMG Fe-doped AlGaN/AlN/GaN HEMTs with sheet charge density model

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