Investigation on defect control for final chemical mechanical polishing of aluminum alloy

Pan, Guoshun; Gong, H.; Gu, Zhonghua; Zou, Chunli; Chen, Gaopan

doi:10.1177/1350650114541637

Cited by 5 publications

(3 citation statements)

References 32 publications

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“…For ultra-precision machining of aluminum alloy, a large number of scholars have conducted research on its processing technology. For example, by adding 0.7 wt.% nitric acid and 0.1 wt.% hydrolyzed polymaleic anhydride to CMP slurry, the surface orange peel defects are significantly improved after polishing, while Ra of the polished aluminum alloy is reduced to 0.678 nm [2] . However, the polishing process uses chemical reagents that are not friendly to the environment and the operator, such as nitric acid, which causes potential danger.…”

Section: Introductionmentioning

confidence: 99%

Research on the Chemical Mechanical Polishing Process of Aluminum Alloy Wafers with Acidic Slurry

Song

Zhao²,

Zhang³

2023

J. Phys.: Conf. Ser.

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Aluminum alloy has low density, good thermal conductivity, and low resistivity, which has been widely used in the fields of the defense industry, aerospace, and machinery manufacturing. As technology advances, there is a growing demand for high-precision parts and green processing. In this paper, a green chemical mechanical polishing (CMP) slurry for aluminum alloy is developed to optimize the rotational speed and pressure and improve the quality of polished aluminum alloy surface. The influence of CMP slurry composition on the quality of aluminum alloy surface and its mechanism are analyzed. Orthogonal experiments and single-factor experiments are used to investigate the effects of CMP slurry composition and process parameters on the surface quality of polished aluminum alloy. A green chemical mechanical polishing slurry consisting of deionized water, 6 wt.% SiO2, 2 wt.% H2O2, and citric acid to adjust pH=3 was proposed, with the pressure of 24 kPa and rotational speed of 90 r/min. After the CMP of aluminum alloy, surface roughness was reduced from 45.587 nm to 0.876 nm in the scan range of 70 μm × 50 μm. The mechanism was analyzed by X-ray photoelectron spectroscopy (XPS).

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Section: Introductionmentioning

confidence: 99%

Research on the Chemical Mechanical Polishing Process of Aluminum Alloy Wafers with Acidic Slurry

Song

Zhao²,

Zhang³

2023

J. Phys.: Conf. Ser.

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“…Wang et al 5 investigated the effect of H 2 O 2 in alkaline polishing slurry on the MRR of the aluminum alloy CMP, and found that the MRR initially increased with the concentration of H 2 O 2 due to the increase of the corrosion potential and oxide layer thickness and then reached a steady state. Pan et al 6 investigated the effect of corrosion inhibitors in acidic polishing slurry on the surface quality of the aluminum alloy CMP, and found that the addition of a small amount of corrosion inhibitor HNO 3 (0.7 wt%) could generate a protective film on the surface of aluminum alloy, but it can cause point defects. Yang et al 7 investigated the effect of pH, H 2 O 2 , and ethylenediamine tetraacetic acid dipotassium (EDTA-2K) on the MRR of the aluminum alloy CMP, and found that the MRR increased with the increase of pH and EDTA-2K concentration, and the MRR increased first and then decreased with the increase of H 2 O 2 concentration.…”

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confidence: 99%

Experimental Investigation on Chemical Mechanical Polishing of ZA27 Alloy Considering Galvanic Corrosion at Zn/Al Interface

Qin,

Pan,

et al. 2024

ECS J. Solid State Sci. Technol.

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To improve the surface integrity of ZA27 alloy, a method of chemical mechanical polishing (CMP) considering the galvanic corrosion at the Zn/Al interface is proposed to treat the surface of ZA27 alloy. Firstly, the electrochemical experiment is carried out to study the influence of the pH, H2O2 concentration, and glycine concentration on corrosion potential between zinc and aluminum. Then the Taguchi method integrated with grey relation analysis and fuzzy inference are used to optimize the CMP parameters of ZA27 alloy. Finally, the prediction model of the MRR and surface roughness Ra is established using the mathematical regression analysis method. The experimental results showed that the minimum zinc-aluminum corrosion potential difference is 14 mV when the pH is 10, H2O2 concentration is 1 wt%, and glycine concentration is 0.4 wt%. The optimum CMP parameter is the polishing pressure of 34 kPa, the polishing plate's rotational speed of 70 rpm, and the abrasive particle concentration of 15 wt%. After polishing with the optimum CMP parameter, the MRR is 242 nm/min, and the surface roughness Ra is 13.91 nm. This study demonstrates that the CMP considering the galvanic corrosion at the Zn/Al interface is an effective method for treating ZA27 alloy surface.

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“…9 Up to now, chemical mechanical polishing (CMP) is the only surface fine-machining technology that can provide global planarization. [10][11][12][13][14][15][16] The basic principle of CMP is to rotate the workpiece with the polishing pad under a certain pressure with the flow of a slurry consisting of ultrafine particles and a chemical oxidizing agent in a liquid medium. Smooth and flat surface are obtained by the removal of material through chemical corrosion and mechanical grinding.…”

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confidence: 99%

Mechanism of GaN CMP Based on H₂O₂Slurry Combined with UV Light

Wang

Pan

et al. 2015

ECS J. Solid State Sci. Technol.

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Chemical mechanical polishing (CMP) of GaN(0001) with a H2O2-SiO2-based slurry is investigated in this paper. The result shows that an atomically flat surface with a roughness of 0.065 nm is obtained after polishing. Compared with a SiO2-based slurry, the H2O2-SiO2-based slurry can realize a higher material removal rate (MRR) and a better surface quality with less scratches. The pH value mainly affects the mean particle size of SiO2 and the chemical environment of the corrosion reaction with H2O2, resulting in different MRRs. An off-site auxiliary polishing method is employed along with the H2O2-SiO2-based polishing system using ultraviolet light to shine the outlet of slurry in order to catalyze the production of substance for oxidation, and it is proved to be efficient by improving the MRR to 103 nm/h. Physical and mathematic removal models are proposed to describe the removal mechanism of GaN CMP.

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Investigation on defect control for final chemical mechanical polishing of aluminum alloy

Cited by 5 publications

References 32 publications

Research on the Chemical Mechanical Polishing Process of Aluminum Alloy Wafers with Acidic Slurry

Research on the Chemical Mechanical Polishing Process of Aluminum Alloy Wafers with Acidic Slurry

Experimental Investigation on Chemical Mechanical Polishing of ZA27 Alloy Considering Galvanic Corrosion at Zn/Al Interface

Mechanism of GaN CMP Based on H₂O₂Slurry Combined with UV Light

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Investigation on defect control for final chemical mechanical polishing of aluminum alloy

Cited by 5 publications

References 32 publications

Research on the Chemical Mechanical Polishing Process of Aluminum Alloy Wafers with Acidic Slurry

Research on the Chemical Mechanical Polishing Process of Aluminum Alloy Wafers with Acidic Slurry

Experimental Investigation on Chemical Mechanical Polishing of ZA27 Alloy Considering Galvanic Corrosion at Zn/Al Interface

Mechanism of GaN CMP Based on H2O2Slurry Combined with UV Light

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Mechanism of GaN CMP Based on H₂O₂Slurry Combined with UV Light