Investigation on critical thickness dependence of ALD TiN diffusion barrier in MOL

Subramaniyan, Archana; Luppi, Domingo Ferrer; Makela, Neal; Bauer, L. B.; Madan, A.; Murphy, Richard J.; Baumann, F.H.; Kohli, Kriti; Parks, C.

doi:10.1109/asmc.2016.7491156

Cited by 6 publications

(2 citation statements)

References 8 publications

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“…In this article, the area-selective ALD of TiN is demonstrated on dielectrics with metals as the non-growth area. TiN is a conductive nitride which has applications as metal electrodes, diffusion barrier layers, , and hardmasks in nanoelectronics. Our ABCD-type process for the area-selective ALD of TiN comprises an aniline inhibitor dose (A), a TDMAT precursor dose (B), and a two-step Ar–H 2 plasma exposure; the first part with an electrically-grounded substrate (C) and the second part with substrate biasing (D), as is shown in Figure .…”

Section: Introductionmentioning

confidence: 99%

Area-Selective Atomic Layer Deposition of TiN Using Aromatic Inhibitor Molecules for Metal/Dielectric Selectivity

et al. 2020

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Despite the rapid increase in the number of newly developed processes, area-selective atomic layer deposition (ALD) of nitrides is largely unexplored. ALD of nitrides at low temperature is typically achieved by employing a plasma as the coreactant, which is not compatible with most approaches to area-selective ALD. In this work, a plasma-assisted ALD process for area-selective deposition of TiN was developed, which involves dosing of inhibitor molecules at the start of every ALD cycle. Aromatic molecules were identified as suitable inhibitor molecules for metal/dielectric selectivity because of their strong and selective adsorption on transition metal surfaces. A four-step (i.e., ABCDtype) ALD cycle was developed, which comprises aniline inhibitor (step A) and tetrakis(dimethylamino)titanium precursor (step B) dosing steps, followed by an Ar−H 2 plasma exposure (step C), during which a substrate bias is applied in the second half of the plasma exposure (step D). This process was demonstrated to allow for ∼6 nm of selective TiN deposition on SiO 2 and Al 2 O 3 areas of a nanoscale pattern with Co and Ru non-growth areas. The TiN deposited using this ABCD-type process is of high quality in terms of resistivity (230 ± 30 μΩ cm) and impurity levels. This developed strategy for area-selective ALD of TiN can likely be extended to area-selective ALD of other nitrides.

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Section: Introductionmentioning

confidence: 99%

Area-Selective Atomic Layer Deposition of TiN Using Aromatic Inhibitor Molecules for Metal/Dielectric Selectivity

et al. 2020

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“…4,5 Thickness and properties of underlying glue or liner layers can affect W morphology and crystallinity. 6,7 Fluorine-free atomic layer deposited (ALD) W liner material has demonstrated lower resistivity and improved CVD W gap fill. 8 The application of cyclic pulsing during CVD process is shown to reduce the amount of fluorine impurity in the resulting W. 9 W deposition using the CVD method usually leaves behind seams or voids in the middle of the fill due to re-entrant profile in the deposition sequence.…”

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confidence: 99%

Process Co-Optimization of CVD and CMP for Tungsten Metallization

Pancharatnam

Tseng

Choi

et al. 2020

ECS J. Solid State Sci. Technol.

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Chemical vapor deposition (CVD) and chemical-mechanical planarization (CMP) of tungsten have been the enabling process technologies for semiconductor manufacturing. Despite the long history and relative maturity, however, their combined effects on the electrical performance and topographic variation of W metallization are scarcely reported in the open literature. A previous work on Cu plating demonstrates the feasibility of reducing topography and improving electrical resistance uniformity by manipulating Cu plating process for superior incoming filling across different patterns and line widths within the die. Adopting the similar concept, this study utilizes SiH 4 and WF 6 gas chemistry in a CVD-W process optimized for reduced seam formation. 300 mm wafers with varying W overburden thickness are deposited and polished in order to examine the impacts on resulting resistance uniformity across different line widths, and within-die topography. It will be demonstrated that CVD W overburden thickness alone plays a critical role in the performance of W local interconnects across patterns of varying geometry and feature size. Thicker incoming overburden thickness can improve CMP process window and help mitigate variations in sheet resistance plus local and within-die topography, which can perpetuate during down-stream process and impact device performance adversely. Co-optimization of CVD-W and WCMP processes is pivotal to the performance of W metallization.

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Spectroscopic analysis of ultra-thin TiN as a diffusion barrier for lithium-ion batteries by ToF-SIMS, XPS, and EELS

Kia

Speulmanns

Bönhardt

et al. 2021

Applied Surface Science

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Investigation on critical thickness dependence of ALD TiN diffusion barrier in MOL

Cited by 6 publications

References 8 publications

Area-Selective Atomic Layer Deposition of TiN Using Aromatic Inhibitor Molecules for Metal/Dielectric Selectivity

Area-Selective Atomic Layer Deposition of TiN Using Aromatic Inhibitor Molecules for Metal/Dielectric Selectivity

Process Co-Optimization of CVD and CMP for Tungsten Metallization

Spectroscopic analysis of ultra-thin TiN as a diffusion barrier for lithium-ion batteries by ToF-SIMS, XPS, and EELS

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