Investigation on carrier injection tailoring and electroluminescence of WSe2 quantum dots in light-emitting diodes

Carrier Injection Tailoring and Electroluminescence Properties of Carbon Dots in Electroluminescent Light‐Emitting Diodes

“…It suggests that enhanced hole injection and transporting improve carrier balance in the EML of PBD, and accordingly promoting device efficiency (Figure S4b, Supporting Information). [ 18,35,36 ] Similarly, the phase versus voltage (Φ –V ) transition from around −90° (insulating sate) to about 0° (semiconducting state) is observed (Figure S4c, Supporting Information). Device H3 shows the lowest transition voltage.…”

“…[7][8][9][10][11][12][13] The former benefits to realizing large-size displays and lighting. The stateof-the-art CDs-based electroluminescent LEDs are assembled using pure CDs emitter [14][15][16][17][18] or CDs-doped guest-host emitting system. [15,[19][20][21][22][23] Fantastic CDsbased LEDs have been rapidly developed after the first report by Ma et al [14] Device luminance with dozens to over a hundred cd m À2 has been demonstrated from pure CDs emitters.…”

Contemporary innovations in two-dimensional transition metal dichalcogenide-based P–N junctions for optoelectronics

“…The accessibility of intrinsic p-and n-type 2D materials, such as p-type tungsten diselenide (WSe 2 ) and n-type tungsten disulfide (WS 2 ), is one of the main benefits of TMDCs. TMDC materials are highly desirable for a collection of applications involving FETs, 175 photodetectors, 176 photovoltaics, 177,178 and sensors. 179,180 The introduction of 2D TMDCs might address a long-standing difficulty in traditional p-n junctions built on bulk semiconductors, which have significant limits in the pursuit of low-power feasting, reduced size, and applied appli-cations necessitating durability and versatility.…”