Investigation on Base-Emitter Reverse Biasing: Light Emission, Junction Cross-Talk and Hot Carriers in Single-Polysilicon Quasi Self-Aligned Bipolar-Complementary Metal-Oxide Semiconductor Bipolar Transistors
Abstract:In this paper we investigate, in single-polysilicon quasi self-aligned bipolar transistors of an advanced 0.5 µm planar bipolar-complementary metal-oxide semiconductor (BiCMOS) technology, the base-emitter junction characteristics in reverse bias conditions and its influence on the behaviour of other neighbouring junctions, i.e. collector and substrate. We will show, due to the high emitter and base doping, the non negligible presence of impact-ionization effects superimposed over the well known reverse tunnel… Show more
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