Investigation of Yttrium (Y)-doped ZnO (Y:ZnO)–Ga2O3 core-shell nanowire/Si vertical heterojunctions for high-performance self-biased wideband photodetectors

Saha, Rajib; Chakrabarti, Subhananda; Karmakar, Anupam; Chattopadhyay, Sanatan

doi:10.1007/s10854-023-10148-9

Cited by 6 publications

(1 citation statement)

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“…Solar-blind ultraviolet (UV) photodetector (PD) can nd extensive applications in re prevention, ozone hole monitoring, navigation, and more, for the UVC (200-280 nm) PD is interference-free in low UVC radiation zones in the near-earth environment [1][2][3][4][5][6][7][8]. Because detecting UVC requires wide bandgap semiconductors as the photosensitive layer, UVC PDs are mainly made from ultra-wide bandgap semiconductors (UWBG), such as gallium oxide (Ga 2 O 3 ), aluminum nitride (AlN), boron nitride (BN), and magnesium-doped zinc oxide (MgZnO) [1,[9][10][11][12]. However, the fabrications of UVC PDs using the above UWBG materials all require complex fabrication processes with a high temperature, such as chemical vapor deposition (CVD) [11,13] and molecular beam epitaxy (MBE) [14].…”

Section: Introductionmentioning

confidence: 99%

A UVC photodetector based on Mg-doped ZnO film

Ren,

Zhai,

Song

2024

Preprint

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The solar-blind ultraviolet (UV) photodetector (PD) can find extensive applications in fire prevention, ozone hole monitoring, navigation, and more, for the advantage of no solar background radiation in the UVC band (200-280 nm) at the earth's surface. However, most of the UVC PDs reported in recent years, including gallium oxide PDs, zinc oxide-based PDs, and aluminum nitride PDs, suffer from the complex and costive fabrication process, which requires high-temperature material fabrication and high fabrication costs. Here, we report a UVC PD composed of magnesium-doped zinc oxide (MgZnO) photosensitive functional material via a simple low-temperature sol-gel fabrication method. In the study, firstly, the synthesizing method of the MgZnO photosensitive functional layer is systematically investigated. Then, the optical bandgap change of MgZnO with the doped Mg concentrations is explored. The physical model of the relationship between the Mg-doped concentrations and the optical bandgap of the MgZnO photosensitive functional layer is established by spectroscopic methods. Based on the doping study, a highly responsive MgZnO UVC PD has been designed and fabricated. The MgZnO UVC PD shows a response bandwidth of 200 nm-280 nm, a high responsivity of 108 mA/W, and rise and fall times as low as 0.4 s and 2.4 s, respectively. The work reported here may open an easy, low-cost route for developing UVC PDs.

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