Investigation of wet etching technique for selective patterning of ferroelectric zirconium-doped hafnium oxide thin films for high-frequency electronic applications

Gugoaşă, Livia Alexandra; Romanițan, Cosmin; Aldrigo, Martino; Pârvulescu, Cătălin; Nastase, F.; Vulpe, Silviu; Gavrıla, Raluca; Varasteanu, Pericle; Şerban, Andreea Bianca; Noumi, Rihem; Ishchenko, Olga M.

doi:10.1016/j.matdes.2023.112194

Cited by 5 publications

(1 citation statement)

References 47 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Dry etching usually removes materials from the substrate using reactive gases or plasmas and is commonly used in the semiconductor industry due to its higher selectivity and higher control on feature shapes, but the facility is very expensive for deepand high-aspect-ratio etching and the sidewall scalloping pattern cannot be avoided in dry-etched macropores [27]. Meanwhile, wet etching is a chemical etching to dissolve materials by use of liquid chemicals or etchants without expensive equipment, and can be cost-effective to fabricate macroporous silicon materials, although it may have lower selectivity and limited control on feature shapes [28]. Electrochemical etching is the most popular method of wet etching.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Ordered Macropore Arrays in n-Type Silicon Wafer by Anodic Etching Using Double-Tank Electrochemical Cell

Zhang,

et al. 2024

Micromachines

View full text Add to dashboard Cite

In this work, ordered macropore arrays in n-type silicon wafers were fabricated by anodic etching using a double-tank electrochemical cell. The effects of the wafer thickness, etching time and voltage on the quality of macropore arrays were investigated. Homogeneous macropore arrays could be achieved in 200 μm thick silicon wafers, but could not be obtained from 300 and 400 μm thick silicon wafers. Highly ordered macropore arrays with an aspect ratio of 19 were fabricated in 200 μm thick n-type silicon at 4.5 V. The etching current decreases in 200 μm thick silicon but increases in thicker silicon with an increase in time. It demonstrates that the minority carrier transportation capability from the illuminated surface to the reactive surface is different for silicon wafers with different thicknesses. The minority carrier concentration at the illuminated surface for stable macropore formation and the current under different etching voltages were calculated based on a hole transport model. The results show that appropriately decreasing wafer thickness and increasing voltage can help stable macropore array fabrication in the illumination-limited double-tank cell.

show abstract

Section: Introductionmentioning

confidence: 99%