Abstract:Through-silicon-via (TSV) fabrication using deep reactive-ion etching has many constraints, such as complicated process and high cost. This paper presents a novel fabrication method of TSVs based on double-sided anisotropic wet etching of (100)-oriented silicon wafer. To increase the I/O interconnection density, a metallization process of TSVs with multiinterconnection is first proposed and realized by spray coating and semiadditive plating process. Both TSVs with one wire and four wires are designed and fabri… Show more
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