Investigation of Uncertainty Sources of Piezoresistive Silicon Based Stress Sensor

Abstract

The aim of this paper is to get insight into measurement uncertainties for thermomechanical measurements performed using a piezoresistive silicon-based stress sensor in a standard microelectronic package. All used sensors have the same construction, were produced in the same technological processes at the same time, yet the measurement results show significant distribution. The possible causes for this phenomenon are discussed in this paper. Additionally, Finite Element Method (FEM) model is created and validated, what enables a study of sensitive parameters influencing the measurement uncertainties.

<inline-formula> <tex-math notation="LaTeX">$In\ Situ$ </tex-math> </inline-formula> Failure Detection of Electronic Control Units Using Piezoresistive Stress Sensor

“…The results show very good agreement. The small deviations are attributed to the uncertainties of the stress sensor [17] and the material properties used in the simulation. The repeatability of measurements is known to be 0.3 MPa, and sample-to-sample variations are 2 − 6 MPa.…”

Condition Monitoring Algorithm for Piezoresistive Silicon-Based Stress Sensor Data Obtained from Electronic Control Units

“…The results show very good agreement. The small deviations are attributed to the uncertainties of the stress sensor [17] and the material properties used in the simulation.…”