Investigation of ultrasonic platinum and palladium wire bonding as interconnection technology for high-temperature SiC-MEMS

Zeiser, R.; Wagner, P.; Wilde, Juergen

doi:10.1109/estc.2012.6542125

Cited by 11 publications

(4 citation statements)

References 9 publications

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“…It is also very resistant to corrosion because of its chemical inertness. This material has already been demonstrated as the interconnection material for SiC sensors, which are deployed in high-temperature environments [11]. Another important aspect is the matching of the coefficient of thermal expansion (CTE) of the wire material to the chip and substrate metallization.…”

Section: Gold and Palladium Wire Bondingmentioning

confidence: 99%

Assembly and packaging technologies for high-temperature and high-power GaN HEMTs

Bajwa

Qin

Wilde

et al. 2014

2014 IEEE 64th Electronic Components and Technology Conference (ECTC)

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In this work, assembly and packaging technologies for high-temperature high-power GaN high electron mobility transistors (HEMTs) are presented. GaN HEMTs with epitaxial growth on Silicon substrates were used during these experiments. Both die-attachment and interconnection techniques were investigated and a performance comparison is given before and after the assembly process. State-of-the-art silver sintering and transient liquid phase bonding were used as die-attachment methods [2], [3]. For the die-attach material, various characterizations such as shear strength, Energy Dispersive X-ray (EDX) spectroscopy and Differential Scanning Calorimetery (DSC) were performed to characterize the operation up to 500 °C. An estimation of the thermal behavior of the sintered and TLP-bonded GaN HEMTs is performed. For interconnection, gold- and palladium-based materials were investigated for wire-bonding. The complete bonding process was characterized. Estimations about the current carrying capabilities are made for both materials. Passive temperature cycling from -40 to +150 °C was performed as an indication of initial reliability for both dieattachments and interconnections. A systematic electrical characterization of HEMTs is performed starting from the on wafer measurements up to the final assembly process. The influence of thermal effects on the electrical properties, such as on-state resistance at higher power levels, i.e., 350 W were studied before and after the assembly process. A combination of sintered device with the gold wire bonds is considered as the optimum packaging of GaN HEMTs

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Section: Gold and Palladium Wire Bondingmentioning

confidence: 99%

Assembly and packaging technologies for high-temperature and high-power GaN HEMTs

Bajwa

Qin

Wilde

et al. 2014

2014 IEEE 64th Electronic Components and Technology Conference (ECTC)

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“…For the electrical interconnection of the sensors, platinum wire bonding has been approved and can be conducted after the die-attach process [5].…”

Section: A Pressure Sensor and Strain Gaugesmentioning

confidence: 99%

Mechanical Stress Analyses of Packaged Pressure Sensors for Very High Temperatures

Zeiser¹,

Ayub²,

Hempel³

et al. 2014

Journal of Microelectronics and Electronic Packaging

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Methods for investigations of stresses specialized for devices operating up to 500°C are presented in this study. Resistive pressure sensors and test chips with microstrain (μ-strain) gauges are processed in thin film technology. The sensor structure was a Wheatstone bridge on a silicon membrane with platinum resistors. The μ-strain gauges were characterized with tensile tests in combination with optical strain measurements. A gauge factor of 3.6 was measured at room temperature. After characterization as bare dice, the chips were mounted with a borosilicate glass solder on two ceramic substrates, AlN and Si3N4. We generated a FE model of the sensor assemblies including temperature-dependent material properties. The distribution of mechanical strains and stresses in the sensor was analyzed. The chip warpage dependent on temperature up to 500°C was obtained from FE simulations and compared with high-precision 3D deformation measurements. Deformation results from digital image correlation (DIC) verified the utilized FE model. The correlation of experimental results for the chip warpage exhibited good agreement with the numerical results obtained from FEM. The chip deflection from the center to the edges in the out-of-plane direction on AlN was 4.5 μm; on Si3N4 a concave warpage of 3 μm at 25°C was found. Temperature-induced deformations of the sensor chip in the range of micrometers were recorded up to 500°C. The output signal of the pressure sensors is strongly affected by superimposed strains based on the sensor assembly. The bridge voltage increased by 40% after the glass solder process on AlN and by 34% for devices on Si3N4. The analysis of the μ-strain gauges showed compressive strains in the sensor membrane of −1.39% on average for assemblies on AlN and of −0.168% for glass soldered chips on Si3N4. The FEM simulations revealed an average in-plane stress in the sensor membrane of −45 MPa for chips on AlN and −20 MPa for Si3N4 substrates. The compressive strains in the membrane obtained by FEM were verified by the μ-strain gauge measurements. A higher strain and stress gradient in the membrane of devices on AlN was found with FEM, which is consistent with the higher signal offset of assembled pressure sensors that was measured in this study.

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“…Platinum (Pt) is a chemically noble transition metal (TM) with exceptional properties including the highest catalytic activity for oxygen reduction of any of the pure metals [1], a relatively high melting point of 1769°C [2], and a yield strength that is low enough to be compatible with traditional wire wedge bonding [3]. Consequently, Pt is attractive in thin film technology for applications such as electrocatalytic electrodes in fuel cells [4] and high temperature, corrosion-resistant interconnects in electronic devices [3,5,6].…”

Section: Introductionmentioning

confidence: 99%

Platinum metallization on silicon and silicates

Taylor

2021

Journal of Materials Research

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Thin films of platinum deposited by physical vapor deposition (PVD) processes such as evaporation and sputtering are used in many academic and industrial settings, for example to provide metallization when tolerance to corrosive thermal cycling is desired, or in electrocatalysis research. In this review, various practical considerations for platinum (Pt) metallization on both Si and SiO 2 are placed in context with a comprehensive data review of diffusion measurements. The relevance of diffusion phenomena to the development of microstructure during deposition as well as the effect of microstructure on the properties of deposited films are discussed with respect to the Pt-Si system. Since Pt and Si readily form silicides, diffusion barriers are essential components of Pt metallization on Si, and various failure modes for diffusion barriers between Pt and Si are clarified with images obtained by electron microscopy. Adhesion layers for Pt films deposited on SiO 2 are also considered.

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Investigation of ultrasonic platinum and palladium wire bonding as interconnection technology for high-temperature SiC-MEMS

Cited by 11 publications

References 9 publications

Assembly and packaging technologies for high-temperature and high-power GaN HEMTs

Assembly and packaging technologies for high-temperature and high-power GaN HEMTs

Mechanical Stress Analyses of Packaged Pressure Sensors for Very High Temperatures

Platinum metallization on silicon and silicates

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