Investigation of trapping/de-trapping dynamics of surface states in AlGaN/GaN high-electron mobility transistors based on dual-gate structures

Recess-free enhancement-mode AlGaN/GaN RF HEMTs on Si substrate

“…An invisible current collapse occurs in the linear region under a quiescent bias of V GS, Q = 0 V, V DS, Q = 15 V. An abnormal negative I D is observed under pulse bias with V GS = 3 V, which may be attributed to the gate to drain parasitic capacitors charging current at high gate voltage during pulse testing. According to the pulse I−V measurement results and our previous V GS (V) V GS (V) results [23,28,29] , the combination of RPP and PECVD-SiN x is an effective passivation method for the UTB-AlGaN/GaN HEMTs.…”