Investigation of TiO2 as the buffer layer in wide bandgap chalcopyrite solar cells using SCAPS

Liu, Xuhui; Hu, Yong

doi:10.1007/s10854-022-07799-5

Cited by 9 publications

(4 citation statements)

References 43 publications

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“…As illustrated in Figure 1b, the PPVs are composed of transparent conductive oxide (FTO)/ electron transport layer (ETL) TiO 2 / Table 1. The physical parameters used for the simulation of CsSnI3-based PPVs [9,32,53,[68][69][70][71] . Electron thermal velocity (cm s −1 ) 1 .…”

Section: Device Modeling and Simulationmentioning

confidence: 99%

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Unraveling the Performance of All‐Inorganic Lead‐Free CsSnI₃‐Based Perovskite Photovoltaic with Graphene Oxide Hole Transport Layer

Widianto,

Driyo,

Sudarsono

et al. 2023

Advcd Theory and Sims

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Addressing the imperative need to eliminate hazardous lead from the widely used metal halide perovskite photovoltaics (PPVs), the search for efficient and stable lead‐free perovskite alternatives remains pivotal. Herein, a performance analysis of lead‐free, all‐inorganic cesium tin triiodide (CsSnI3)‐based PPVs with a graphene oxide hole transporting layer using solar cell capacitance simulator is presented. Various parameters to optimize the PPV performance, including CsSnI3 layer thickness, defect density, interface defect, parasitic resistances, and working temperature are explored. The optimization process yielded remarkable results, with open‐circuit voltage of 0.87 V, short‐circuit current density of 32.55 mA cm−2, fill factor of 77.59%, and power conversion efficiency of 22.15%. The proposed device structure and parameters not only contribute to the advancement of these experimental works but also offer a novel strategy for the structural optimization of lead‐free PPVs, thereby paving new avenues for future research in this area.

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Section: Device Modeling and Simulationmentioning

confidence: 99%

“…0× 10 1, sourced from previously published data. [9,32,53,[68][69][70][71] Table 2 summarizes the interface defect parameters of CsSnI 3 -based PPVs. Initially, the device simulations were conducted by varying the thickness of CsSnI 3 in the range of 100−600 nm.…”

Section: Device Modeling and Simulationmentioning

confidence: 99%

Unraveling the Performance of All‐Inorganic Lead‐Free CsSnI₃‐Based Perovskite Photovoltaic with Graphene Oxide Hole Transport Layer

Widianto,

Driyo,

Sudarsono

et al. 2023

Advcd Theory and Sims

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“…The properties calculated by the DFT were used as input parameters to SCAPS-1D software version 3.3.10. [49][50][51][52][53] 3 | RESULTS AND DISCUSSION…”

Section: Computational Detailsmentioning

confidence: 99%

Fluorinated copper phthalocyanine as an electron transport material in perovskite solar cell

Pindolia

Pandya

Shinde

et al. 2022

Intl J of Energy Research

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Summary The state‐of‐art charge transport materials, TiO2 and Spiro‐OMeTAD suffer from various drawbacks such as instability, lengthy fabrication procedure and low charge mobilities. In this paper, we have studied copper phthalocyanine (CuPc) and halogen‐substituted copper phthalocyanine (X16CuPc; X = F, Cl, Br, I) through density functional theory (DFT) and determined their ground state properties, excited state properties and solubility in DMSO (widely used solvent in the fabrication of perovskite solar cell [PSC]). We have shown that fluorinated copper phthalocyanine(F16CuPc) acts as an electron transport layer (ETL) and CuPc acts as a hole transport layer (HTL) in MAPbI3‐based PSC. The moisture stability of CuPc and F16CuPc has been established and it has been shown that CuPc and F16CuPc will protect the perovskite layer from degradation due to the presence of moisture in the surroundings. Using the properties obtained via DFT, PSC has been simulated using SCAPS, and it is established that CuPc as hole transport material and F16CuPc as electron transport material gives better efficiency compared with the state of art charge transport materials (TiO2 and Spiro‐OMeTAD). The device has been optimized with respect to (w.r.t.) thickness, doping concentration, defect density and interface defect density. We have studied the effect of series resistance, shunt resistance and temperature on the performance of PSC and this configuration has shown good thermal stability. Carbon has been proposed as an alternative to gold as the back contact thereby making our device more economical. The optimized device showed quantum efficiency of (81.59% to 98.69%) in the visible region. A fill factor of 79.01%, power conversion efficiency of 22.30% has been obtained.

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“…In recent years, Solar Cell Capacitance Simulator (SCAPS) program is utilized in many studies to simulate the performance of various numbers of solar cells. [40][41][42][43] The different optoelectric parameter calculations in this program are based on solving 1D equations (Poisson equation and the continuity equation of electron and holes [44] ).…”

Section: Introductionmentioning

confidence: 99%

Effect of Li Doping on Cu₂SnS₃/n‐Si Heterojunction Solar Cells: Experiments and Simulation

Houimi

Gezgi̇n

Mercimek

et al. 2022

Cryst. Res. Technol.

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Cu 2 SnS 3 (CTS) semiconductor material owns very interesting absorbing properties that allow it to be effectively utilized in many thin-film-based heterojunction solar cells. In this work, using the ball milling method, a mixture of pure elemental powders is used to synthesize CTS material. Homemade undoped and Li-doped target pellets are used to form CTS-doped and CTS-undoped thin films. The crystallinity investigation of synthesized targets and thin films confirms the formation of CTS tetragonal phase. Compositional, morphologic, and optic studies are also made to examine the effect of Li atom incorporation on different properties of CTS thin films. These CTS thin films are also incorporated into heterojunction solar cells (Al/n-Si/CTS/Ag and Al/n-Si/Li 0.03 CTS/Ag). In addition, J-V characteristics of both CTS and Li 0.03 CTS solar cells are demonstrated and discussed in details. The effect of CTS thin films' thickness on the performance is studied using Solar Cell Capacitance Simulator (SCAPS-1D) program. The results of the calculation are discussed in details and compared with the experimental results. An increase in efficiency is achieved in solar cells based on Li-doped CTS thin films, and it is discussed in detail along with SCAPS-1D simulation that is carried out depending on the thickness of CTS thin films.

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Investigation of TiO2 as the buffer layer in wide bandgap chalcopyrite solar cells using SCAPS

Cited by 9 publications

References 43 publications

Unraveling the Performance of All‐Inorganic Lead‐Free CsSnI₃‐Based Perovskite Photovoltaic with Graphene Oxide Hole Transport Layer

Unraveling the Performance of All‐Inorganic Lead‐Free CsSnI₃‐Based Perovskite Photovoltaic with Graphene Oxide Hole Transport Layer

Fluorinated copper phthalocyanine as an electron transport material in perovskite solar cell

Effect of Li Doping on Cu₂SnS₃/n‐Si Heterojunction Solar Cells: Experiments and Simulation

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Investigation of TiO2 as the buffer layer in wide bandgap chalcopyrite solar cells using SCAPS

Cited by 9 publications

References 43 publications

Unraveling the Performance of All‐Inorganic Lead‐Free CsSnI3‐Based Perovskite Photovoltaic with Graphene Oxide Hole Transport Layer

Unraveling the Performance of All‐Inorganic Lead‐Free CsSnI3‐Based Perovskite Photovoltaic with Graphene Oxide Hole Transport Layer

Fluorinated copper phthalocyanine as an electron transport material in perovskite solar cell

Effect of Li Doping on Cu2SnS3/n‐Si Heterojunction Solar Cells: Experiments and Simulation

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Unraveling the Performance of All‐Inorganic Lead‐Free CsSnI₃‐Based Perovskite Photovoltaic with Graphene Oxide Hole Transport Layer

Unraveling the Performance of All‐Inorganic Lead‐Free CsSnI₃‐Based Perovskite Photovoltaic with Graphene Oxide Hole Transport Layer

Effect of Li Doping on Cu₂SnS₃/n‐Si Heterojunction Solar Cells: Experiments and Simulation