Investigation of thin n-in-p planar pixel modules for the ATLAS upgrade

Savic, N.; Beyer, J.; Rosa, A. La; Macchiolo, A.; Nisius, R.

doi:10.1088/1748-0221/11/12/c12008

Cited by 12 publications

(21 citation statements)

References 10 publications

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“…At a bias voltage of 600 V the power dissipation per unit area is about 6 mW/cm 2 after a fluence of 3 × 10 15 n eq /cm 2 when scaled to t = −25 • C (the expected pixel detector temperature at ITk [7]) using the same formula used for the leakage current; this power dissipation is just below the specification for ITk pixels at Φ = 2 × 10 15 n eq /cm 2 (6.4 mW/cm 2 [7]). At Φ = 1×10 16 n eq /cm 2 the power dissipation is about 40 mW/cm 2 ; this value is comparable to what has been reported in [21] for 100 µm thick pixel detectors aimed at ITk.…”

Section: Leakage Currentsupporting

confidence: 81%

Performance of thin planar n-on-p silicon pixels after HL-LHC radiation fluences

Ducourthial

Bomben

Calderini

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

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The tracking detector of ATLAS, one of the experiments at the Large Hadron Collider (LHC), will be upgraded in 2024-2026 to cope with the challenging environment conditions of the High Luminosity LHC (HL-LHC). The LPNHE, in collaboration with FBK and INFN, has produced 130 µm thick n − on − p silicon pixel sensors which can withstand the expected large particle fluences at HL-LHC, while delivering data at high rate with excellent hit efficiency. Such sensors were tested in beam before and after irradiation both at CERN-SPS and at DESY, and their performance are presented in this paper. Beam test data indicate that these detectors are suited for all the layers where planar sensors are foreseen in the future ATLAS tracker: hit-efficiency is greater than 97% for fluences of Φ 7 × 10 15 n eq /cm 2 and module power consumption is within the specified limits. Moreover, at a fluence of Φ = 1.3 × 10 16 n eq /cm 2 , hit-efficiency is still as high as 88% and charge collection efficiency is about 30%. Hardness 1 ATLAS uses a right-handed coordinate system with its origin at the nominal interaction point (IP) in the centre of the detector and the z-axis coinciding with the axis of the beam pipe. The x-axis points from the IP towards the centre of the LHC ring, and the y-axis points upward. Cylindrical coordinates (r,φ) are used in the transverse plane, φ being the azimuthal angle around the z-axis. The pseudorapidity is defined in terms of the polar angle θ as η = − ln tan(θ/2).

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Section: Leakage Currentsupporting

confidence: 81%

Performance of thin planar n-on-p silicon pixels after HL-LHC radiation fluences

Ducourthial

Bomben

Calderini

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

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“…Results on the in-pixel efficiency of small pixel implants before irradiation were previously shown in [2] and will now be shown after an irradiation up to 5×10 15 n eq /cm 2 .…”

Section: Atlas Pixel Detector Upgrade For Hl-lhcmentioning

confidence: 55%

“…The results of Edge-TCT measurements are discussed for thin either unirradiated or irradiated sensors up to an irradiation level of 1×10 16 n eq /cm 2 . Previous results on the hit efficiency and power dissipation revealed that modules with thin sensors are a promising candidate for the innermost layers [2]. Given the high particle rate expected at HL-LHC smaller pixel dimensions with respect to the ones currently implemented in the FE-I3 chip (50x400 µm 2 ) [3] and the FE-I4 chip (50x250 µm 2 ) [4] are necessary to keep the occupancy at an acceptable level.…”

Section: Atlas Pixel Detector Upgrade For Hl-lhcmentioning

confidence: 99%

Performance of irradiated thin n-in-p planar pixel sensors for the ATLAS Inner Tracker upgrade

et al. 2017

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A : The ATLAS collaboration will replace its tracking detector with new all silicon pixel and strip systems. This will allow to cope with the higher radiation and occupancy levels expected after the 5-fold increase in the luminosity of the LHC accelerator complex (HL-LHC). In the new tracking detector (ITk) pixel modules with increased granularity will implement to maintain the occupancy with a higher track density. In addition, both sensors and read-out chips composing the hybrid modules will be produced employing more radiation hard technologies with respect to the present pixel detector. Due to their outstanding performance in terms of radiation hardness, thin n-in-p sensors are promising candidates to instrument a section of the new pixel system. Recently produced and developed sensors of new designs will be presented. To test the sensors before interconnection to chips, a punch-through biasing structure has been implemented. Its design has been optimized to decrease the possible tracking efficiency losses observed. After irradiation, they were caused by the punch-through biasing structure. A sensor compatible with the ATLAS FE-I4 chip with a pixel size of 50x250 µm 2 , subdivided into smaller pixel implants of 30x30 µm 2 size was designed to investigate the performance of the 50x50 µm 2 pixel cells foreseen for the HL-LHC. Results on sensor performance of 50x250 and 50x50 µm 2 pixel cells in terms of efficiency, charge collection and electric field properties are obtained with beam tests and the Transient Current Technique.

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“…For the non-uniformly irradiated device, the estimation of power dissipation cannot be directly obtained, but is estimated by combining V 97% with the leakage current measured on strip test structures with the same 3D cell size and fluence [8] as 9 and 13 mW/cm 2 at 1.0 and 1.4×10 16 n eq /cm 2 , respectively. Hence, the operation voltage and power dissipation are considerably lower than for planar pixels, for which the best values at 1.0×10 16 n eq /cm 2 (obtained for 100 µm thickness) are V 97% =500 V with a power dissipation of minimally 25 mW/cm 2 [10].…”

Section: Irradiationsmentioning

confidence: 93%

Radiation Hardness of Small-Pitch 3D Pixel Sensors up to HL-LHC Fluences

Lange

Pellegrini

Terzo

et al. 2018

Springer Proceedings in Physics

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A new generation of 3D silicon pixel detectors with a small pixel size of 50×50 and 25×100 µm 2 is being developed for the HL-LHC tracker upgrades. The radiation hardness of such detectors was studied in beam tests after irradiation to HL-LHC fluences up to 1.4×10 16 neq/cm 2 . At this fluence, an operation voltage of only 100 V is needed to achieve 97% hit efficiency, with a power dissipation of 13 mW/cm 2 at -25 • C, considerably lower than for previous 3D sensor generations and planar sensors.

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Investigation of thin n-in-p planar pixel modules for the ATLAS upgrade

Cited by 12 publications

References 10 publications

Performance of thin planar n-on-p silicon pixels after HL-LHC radiation fluences

Performance of thin planar n-on-p silicon pixels after HL-LHC radiation fluences

Performance of irradiated thin n-in-p planar pixel sensors for the ATLAS Inner Tracker upgrade

Radiation Hardness of Small-Pitch 3D Pixel Sensors up to HL-LHC Fluences

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