Investigation of Thermal Behavior on High-Performance Organic TFTs Using Phase Separated Organic Semiconductors

Hung, Yang‐Hao; Chang, Ting‐Chang; Zheng, Yu‐Zhe; Su, Wan-Ching; Tu, Yu‐Fa; Chen, Jianjie; Kuo, Chang-Hung; Lu, I-Nien; Chen, Yuan; Tsai, Chia-Hung Dylan; Ogier, Simon

doi:10.1109/led.2021.3072410

Cited by 9 publications

(9 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A 25 nm active layer of an organic semiconductor (OSC) (TruFlex OSC) was fabricated by spin-coating the small molecule (TMTES-pentacene) with a polymer binder blend from a solvent solution. Subsequently, annealing at 150 °C for 1 min was used for dry and vertical separation. , This blend of OSCs produced a film with a highly crystallized channel that showed good uniformity over the substrate. By exploiting the difference in the hydrophobicity of different components, phase separation between a polymer binder and small molecules was achieved, where small molecules remained on top. , …”

Section: Methodsmentioning

confidence: 99%

“…Subsequently, annealing at 150 °C for 1 min was used for dry and vertical separation. , This blend of OSCs produced a film with a highly crystallized channel that showed good uniformity over the substrate. By exploiting the difference in the hydrophobicity of different components, phase separation between a polymer binder and small molecules was achieved, where small molecules remained on top. , …”

Section: Methodsmentioning

confidence: 99%

“…By exploiting the difference in the hydrophobicity of different components, phase separation between a polymer binder and small molecules was achieved, where small molecules remained on top. 24,25 A small-molecule layer with intrinsic high mobility and the main channel current will flow at the interface between the OSC layer and the 110 nm low-k polar-free TruFlex OGI layer. 26 A 300 nm crosslinked organic polymer (TruFlex SRL) was deposited on the OGI by spin-coating and formed the sputter-resistant layer (SRL).…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

See 2 more Smart Citations

Physical Mechanism of the Mechanical Bending of High-Performance Organic TFTs and the Effect of Atmospheric Factors

Zheng

Chen

et al. 2022

ACS Appl. Electron. Mater.

Self Cite

View full text Add to dashboard Cite

In this paper, we investigate the electrical characteristics of organic thin-film transistors (OTFTs) after mechanical bending stress conducted in a range of different atmospheres. After 100,000 cycles of channel-width-axis compressive bending and a long-term fixed curve at a bending radius of R = 5 mm in an atmospheric environment, the threshold voltage (V T ) is seen to shift in the positive direction. Following annealing after bending, the V T recovers to a value more negative than the initial V T for both dynamic and static bending tests. Performing bending tests in a vacuum, which eliminates the influence of the ambient atmosphere on the OTFTs, shows that the degradation of the device under atmospheric bending is dominated by two mechanisms. Gasses present in the ambient environment (humidity, N 2 , CO 2 , and O 2 ) are introduced sequentially to understand their effect on the OTFTs. By studying the effects in the vacuum and atmosphere, we are able to separate the physical effects of mechanical bending on the OTFTs from the changes induced by exposure to environmental factors. Due to different mechanical bending conditions, the small molecules at the surface of the active layer cause different electrical characteristics. Finally, a physical model of mechanical bending and atmospheric factors for organic TFTs is proposed.

show abstract

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: ■ Experimental Sectionmentioning

confidence: 99%

See 1 more Smart Citation

Physical Mechanism of the Mechanical Bending of High-Performance Organic TFTs and the Effect of Atmospheric Factors

Zheng

Chen

et al. 2022

ACS Appl. Electron. Mater.

Self Cite

View full text Add to dashboard Cite

show abstract

“…While previous studies have discussed the transfer mechanism [15], the leakage degradation [16] and the self-heating effect [17] of the OTFTs device which is the same as that used in our study, the difference of the extended electrode on hot carrier instability (HCI) is mainly investigated in our study. Hot carrier effects are crucial among these reliability issues.…”

mentioning

confidence: 99%

Improving Hot Carrier Reliability of Organic-TFTs by Extended Electrode

Hung

Lin

Chang

et al. 2023

IEEE Electron Device Lett.

Self Cite

View full text Add to dashboard Cite

This work investigates the impact of sourcedrain-gate electrode overlap geometry on the reliability of organic thin-film transistors (OTFTs). The degradation of electrical characteristics after stress-induced hot carrier instability (HCI) is analyzed by comparing I D -V G transfer curves and C-V characteristic curves before and after the stress test. Severe degradation is observed in standard symmetry and source-extended structures, but increased reliability is observed in a drain-extended structure. A physical model is proposed to explain this behavior in the letter, and Technology Computer-Aided Design (TCAD) simulations are used to explore the electrical field distribution in the devices for further understanding.

show abstract

“…A 25-nm-thick OSC layer (TRUFLEX ® OSC) was fabricated by spin-coating the small molecule (TMTES-P):polymer binder blend from a solvent solution. The intrinsic chemical characteristics of the hydrophobic small molecule and high-k hydrophilic polymer enables effective phase separation of the crystalline OSC layer from the amorphous semiconducting binder6 . The small molecule and polymer binder is a solution during spinning.…”

mentioning

confidence: 99%

69‐3: Opportunities for High‐Performance Display Manufacturing Enabled by OTFTs Using an 80*C Maximum Process Temperature

Ogier

Sharkey

Carreras

et al. 2022

Symp Digest of Tech Papers

Self Cite

View full text Add to dashboard Cite

This paper describes advantages in manufacturing available when dual gate organic thin‐film transistors (OTFT) are integrated into display backplanes. A maximum process temperature of 80°C was chosen throughout the fabrication which used standard display backplane coating and patterning techniques. OTFTs produced in this way demonstrated mobilities up to 3cm2/Vs with on/off ratios above 109. Using 80°C processing permits the use of a wide range of low‐cost plastic substrates with good clarity for semi‐transparent displays. Biodegradable and bio‐derived substrates can be used which helps prevent the problem of plastic pollution at the end of life of the product. Laminating plastic on glass carrier substrates is made easier through the low thermal budget, reducing distortion, and bowing. Additionally, integration of emissive elements such as OLEDs, colour filters, micro‐LEDs could take place before the backplane is applied which may offer benefits in yield or functionality.

show abstract

Investigation of Thermal Behavior on High-Performance Organic TFTs Using Phase Separated Organic Semiconductors

Cited by 9 publications

References 31 publications

Physical Mechanism of the Mechanical Bending of High-Performance Organic TFTs and the Effect of Atmospheric Factors

Physical Mechanism of the Mechanical Bending of High-Performance Organic TFTs and the Effect of Atmospheric Factors

Improving Hot Carrier Reliability of Organic-TFTs by Extended Electrode

69‐3: Opportunities for High‐Performance Display Manufacturing Enabled by OTFTs Using an 80*C Maximum Process Temperature

Contact Info

Product

Resources

About