2014
DOI: 10.1002/jrs.4617
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Investigation of the vibrational modes of ZnO grown by MOCVD on different orientation planes

Abstract: Wurtzite ZnO thin films were prepared on sapphire substrate by metal organic chemical vapor deposition (MOCVD). Raman scattering studies on different crystallographic textures were performed in the backscattering geometry, and polarization effect is investigated in different configurations z()prefix−prefix−truez¯ and x()prefix−prefix−truex¯. ZnO Raman modes are investigated in each texture. In the case of ZnO thin film deposed on r‐(11‐22) sapphire plane and using backscattering geometry, new Raman line was ob… Show more

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Cited by 22 publications
(10 citation statements)
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References 28 publications
(39 reference statements)
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“…presented an investigation of the vibrational modes of Wurtzite ZnO thin films prepared on sapphire substrate by metal organic chemical vapor deposition (MOCVD) on different orientation planes. They show that the frequencies of the quasi‐phonon modes of the thin films are in good agreement with the theoretical values calculated within the framework of Loudon model . Wojcieszak and colleagues described the origin of the variability of the mechanical properties of silk fibers by considering both order and crystallinity along silkworm and spider fibers.…”
Section: Solid‐state Studiessupporting
confidence: 56%
“…presented an investigation of the vibrational modes of Wurtzite ZnO thin films prepared on sapphire substrate by metal organic chemical vapor deposition (MOCVD) on different orientation planes. They show that the frequencies of the quasi‐phonon modes of the thin films are in good agreement with the theoretical values calculated within the framework of Loudon model . Wojcieszak and colleagues described the origin of the variability of the mechanical properties of silk fibers by considering both order and crystallinity along silkworm and spider fibers.…”
Section: Solid‐state Studiessupporting
confidence: 56%
“…The most intense PL peak at 3.313 eV is the famous FA (free electron to shallow but localized acceptors) transition in ZnO . However, there are other opinions also regarding the origin of this transition . Typical defect species associating both V Zn and V O s near the grain boundary region contribute to this PL emission even at room temperature .…”
Section: Resultsmentioning
confidence: 99%
“…The (*) represents the vibration modes E 1g (~379 cm -1 ) and A 1g (~416 cm -1 ) for the 9 sapphire substrate. 43 The variation of the intensity of these peaks can be evidence of little defects or our thin films. X-ray photoelectron spectroscopy (XPS) studies were further used to analyze the films after a subtle sputter-clean with Ar + ions.…”
Section: Thin Films Chemical Characterizationmentioning
confidence: 99%