INVESTIGATION OF THE TUNNEL COMPONENT OF CONDUCTANCE IN HETEROSTRUCTURES WITH InGaAs/GaAs QUANTUM WELL BY ADMITTANCE SPECTROSCOPY

Ivanova, Ya. V.; Зубков, В. И.

doi:10.1142/9789813224537_0022

Physics, Chemistry and Application of Nanostructures 2017

DOI: 10.1142/9789813224537_0022

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INVESTIGATION OF THE TUNNEL COMPONENT OF CONDUCTANCE IN HETEROSTRUCTURES WITH InGaAs/GaAs QUANTUM WELL BY ADMITTANCE SPECTROSCOPY

Ya. V. Ivanova¹,

В. И. Зубков²

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INVESTIGATION OF THE TUNNEL COMPONENT OF CONDUCTANCE IN HETEROSTRUCTURES WITH InGaAs/GaAs QUANTUM WELL BY ADMITTANCE SPECTROSCOPY

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