Investigation of the thermal annealing effect on electrical properties of Ni/Au, Ni/Mo/Au and Mo/Au Schottky barriers on AlGaN/GaN heterostructures

Sleptsov, E. V.; Черных, А. В.; Черных, С. В.; Dorofeev, A. A.; Gladysheva, N. B.; Кондаков, М. Н.; Sleptsova, A. A.; Паничкин, А. В.; Konovalov, M.; Didenko, S.

doi:10.1088/1742-6596/816/1/012039

Cited by 5 publications

(2 citation statements)

References 25 publications

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“…Among the Schottky metals, Ni/Au systems with high metal work functions and good adhesion are now widely used as Schottky contacts to fabricate AlGaN/GaN HEMTs [329]. However, the gate-leakage current of a Ni/Au-gate device still requires improvement.…”

Section: Gate Contact Engineeringmentioning

confidence: 99%

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

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Conventional silicon (Si)-based power devices face physical limitations—such as switching speed and energy efficiency—which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems. Gallium nitride (GaN) is an excellent candidate for next-generation power devices, capable of improving the conversion efficiency of power systems owing to its wide band gap, high mobility, and high electric breakdown field. Apart from their cost effectiveness, GaN-based power high-electron-mobility transistors (HEMTs) on Si substrates exhibit excellent properties—such as low ON-resistance and fast switching—and are used primarily in power electronic applications in the fields of consumer electronics, new energy vehicles, and rail transit, amongst others. During the past decade, GaN-on-Si power HEMTs have made major breakthroughs in the development of GaN-based materials and device fabrication. However, the fabrication of GaN-based HEMTs on Si substrates faces various problems—for example, large lattice and thermal mismatches, as well as ‘melt-back etching’ at high temperatures between GaN and Si, and buffer/surface trapping induced leakage current and current collapse. These problems can lead to difficulties in both material growth and device fabrication. In this review, we focused on the current status and progress of GaN-on-Si power HEMTs in terms of both materials and devices. For the materials, we discuss the epitaxial growth of both a complete multilayer HEMT structure, and each functional layer of a HEMT structure on a Si substrate. For the devices, breakthroughs in critical fabrication technology and the related performances of GaN-based power HEMTs are discussed, and the latest development in GaN-based HEMTs are summarised. Based on recent progress, we speculate on the prospects for further development of GaN-based power HEMTs on Si. This review provides a comprehensive understanding of GaN-based HEMTs on Si, aiming to highlight its development in the fields of microelectronics and integrated circuit technology.

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Section: Gate Contact Engineeringmentioning

confidence: 99%

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

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“…Many attempts have been made to reduce the gate leakage currents by using gate dielectrics [13] , surface treatment [14] , and post-gate-annealing (PGA) [15] . In the early reports, the PGA has been proven to be an effective method, which can reduce the gate leakage current and increase the breakdown voltage of GaN-based HEMTs [16] . However, studies on the difference between the gate leakage mechanisms before and after the PGA are always ignored, and the effect of the PGA on the reverse-bias gate reliability have been rarely reported.…”

Section: Introductionmentioning

confidence: 99%

Effect of the post-gate annealing on the gate reliability of AlGaN/GaN HEMTs

Chen¹,

Wang²,

Li³

et al. 2021

J. Semicond.

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In this paper, we investigated the effect of post-gate annealing (PGA) on reverse gate leakage and the reverse bias reliability of Al0.23Ga0.77N/GaN high electron mobility transistors (HEMTs). We found that the Poole–Frenkel (PF) emission is dominant in the reverse gate leakage current at the low reverse bias region (V th < V G < 0 V) for the unannealed and annealed HEMTs. The emission barrier height of HEMT is increased from 0.139 to 0.256 eV after the PGA process, which results in a reduction of the reverse leakage current by more than one order. Besides, the reverse step stress was conducted to study the gate reliability of both HEMTs. After the stress, the unannealed HEMT shows a higher reverse leakage current due to the permanent damage of the Schottky gate. In contrast, the annealed HEMT shows a little change in reverse leakage current. This indicates that the PGA can reduce the reverse gate leakage and improve the gate reliability.

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Barrier heights and Fermi level pinning in metal contacts on p-type GaN

Wahid

Chowdhury

Alam

et al. 2020

Applied Physics Letters

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In this work, we investigate the current–voltage (I–V) characteristics of various metal contacts such as Ni/Au, Ir/Au, Ru/Au, Mo/Au, and W/Au on p-GaN. For this, we fabricated different bilayer metal contacts on the same epitaxial heterostructure of GaN, which ensures the uniformity of the experimental data. I–V measurements were then carried out for circular and/or linear contact pads with different spacing values. In each case, the Schottky barrier height of the metal contacts is calculated using the reverse I–V method. A strong Fermi level pinning was found in all these structures on p-GaN, with a pinning factor of ∼0.15. In addition, a very low Ohmic contact resistivity of 3.45 × 10−6 Ω cm2 was measured for the Ru/Au contacts on p-GaN.

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Investigation of the thermal annealing effect on electrical properties of Ni/Au, Ni/Mo/Au and Mo/Au Schottky barriers on AlGaN/GaN heterostructures

Cited by 5 publications

References 25 publications

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Effect of the post-gate annealing on the gate reliability of AlGaN/GaN HEMTs

Barrier heights and Fermi level pinning in metal contacts on p-type GaN

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