2001
DOI: 10.1016/s0169-4332(01)00274-4
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Investigation of the structure and properties of a-C:H coatings with metal and silicon containing interlayers

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Cited by 21 publications
(7 citation statements)
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“…The last method, fabrication of a multilayer structure, e.g., a soft layer and a hard layer, is a viable approach to reduce internal stresses and improve adhesion and film thickness [16]. In previous studies, Nöthe et al [17] and Xie et al [18] have shown that the interlayer coating can generate more robust and more chemical bonds at the interface than metal-doped DLC. Cemin et al [19] showed that the coating detaches from the steel substrate after the deposition process even though the substrate was bombarded with argon plasma.…”
Section: Introductionmentioning
confidence: 99%
“…The last method, fabrication of a multilayer structure, e.g., a soft layer and a hard layer, is a viable approach to reduce internal stresses and improve adhesion and film thickness [16]. In previous studies, Nöthe et al [17] and Xie et al [18] have shown that the interlayer coating can generate more robust and more chemical bonds at the interface than metal-doped DLC. Cemin et al [19] showed that the coating detaches from the steel substrate after the deposition process even though the substrate was bombarded with argon plasma.…”
Section: Introductionmentioning
confidence: 99%
“…Ar gas was introduced into the chamber and maintained at a pressure of 1.5 Â 10 À2 Pa and a Kaufman ion source with a 5-cm-wide beam was turned on for 10 min to remove the native oxide film and any airborne adsorbents on the substrate surface. An $200-nm-thick Si layer was then deposited on the substrate by sputtering the Si target with Ar þ ions (DC power ¼ 80 W; chamber pressure ¼ 0.7 Pa; duration ¼ 40 min) to improve the adhesion between the substrate and the a-C:H film (24). After this step, Si/Ag/a-C:H film deposition onto the Si-coated substrates was performed by sputtering both targets with Ar and CH 4 plasmas (RF power ¼ 150 W [graphite/Ag target]; DC power ¼ 80 W [Si target]; chamber pressure ¼ 0.7 Pa; Ar gas flow rate ¼ 40 sccm; CH 4 gas flow rate ¼ 20 sccm).…”
Section: Film Depositionmentioning
confidence: 99%
“…Internal stress reduction and adhesion enhancement between the DLC film and substrate can be achieved by adding a "seed layer" [3,4]. Various seed layer systems have been tested, including metals (Ti, Al, Cr, W) [5][6][7], ceramics (SiO 2 , SiC, TiC, Si 3 N 4 , CrN) [8][9][10], and more complex composite systems [11]. Silicon nitride seeds have been found to be particularly promising in maintaining film stability under tribological stress regimes [12,13].…”
Section: Introductionmentioning
confidence: 99%