Investigation of the structural, optical and electrical transport properties of n-doped CdSe thin films

Abstract

Thin films of (CdSe) 90 (In 2 O 3 ) 10 , (CdSe) 90 (SnO 2 ) 10 and (CdSe) 90 (ZnO) 10 have been grown on glass substrates by the electron beam evaporation technique. It has been found that undoped and Sn or In doped CdSe films have two direct transitions corresponding to the energy gaps E g and E g + due to spin-orbit splitting of the valence band. The electrical resistivity for n-doped CdSe thin films as a function of light exposure time has been studied. The influence of doping on the structural, optical and electrical characteristics of In doped CdSe films has been investigated in detail. The lattice parameters, grain size and dislocation were determined from x-ray diffraction patterns. The optical transmittance and band gap of these films were determined using a double beam spectrophotometer. The DC conductivity of the films was measured in vacuum using a two-probe technique.

Influence of Zn doping on structural, optical and electrical properties of nanocrystalline CdSe thin films

“…The crystallite size of nc-CdSe:Zn 1% and nc-CdSe:Zn 5% thin films is calculated by using the Scherrer's formula [31]:…”

Effect of Cu incorporation on structural and optical properties of nanocrystalline CdSe (nc-CdSe:Cu) thin films

“…Therefore, the XRD spectrum indicates that for CdSe:Cu 1% and CdSe:Cu 5% thin films, the films grow according to the preferential orientation of the hexagonal phase. In fact, an estimate of the grain size D according to the DebyeScherrer [28] relationship gives the average grain size D = 31 and 44 nm for CdSe:Cu (1%) and CdSe:Cu (5%), respectively. Thus, the increase of the Cu content results in increase of the grain size of the films.…”

Review on the Materials Properties and Photoelctrochemical (PEC) Solar Cells of CdSe, Cd_1-xZn_xSe, Cd_1-xIn_xSe, Thin Films

“…The efficiency and fill factor of these PEC solar cells were increased from 0.79% and 0.46 to 2.12% and 0.49, respectively, with indium doping in CdS 0.2 Se 0.8 thin films. Thin films of (CdSe) 90 (In 2 O 3 ) 10 , (CdSe) 90 (SnO 2 ) 10 and (CdSe) 90 (ZnO) 10 have been grown on glass substrates by H. M. Ali et al [124] using electron beam evaporation technique. It was been found that undoped and Sn or In doped CdSe films had two direct transitions corresponding to the energy gaps E g and E g +∆ attributed to spin-orbit splitting of the valence band.…”