2015 IEEE International Electron Devices Meeting (IEDM) 2015
DOI: 10.1109/iedm.2015.7409717
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Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications

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Cited by 28 publications
(17 citation statements)
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“…Bill et al reported the computational implications of synaptic plasticity through stochastic filament formation in multiple binary RRAM cells tied together in parallel to form a single compound stochastic synapse [156]. A HfO 2 -based vertical RRAM (VRRAM) technology was recently reported by Piccolboni et al [157]. Each synapse is composed of stack of VRRAM devices (each exhibiting only two distinct resistance states) with one common select transistor, exhibiting analog conductance behavior through the parallel configuration of N RRAM cells.…”
Section: Filamentary Rram As a Synapsementioning
confidence: 99%
“…Bill et al reported the computational implications of synaptic plasticity through stochastic filament formation in multiple binary RRAM cells tied together in parallel to form a single compound stochastic synapse [156]. A HfO 2 -based vertical RRAM (VRRAM) technology was recently reported by Piccolboni et al [157]. Each synapse is composed of stack of VRRAM devices (each exhibiting only two distinct resistance states) with one common select transistor, exhibiting analog conductance behavior through the parallel configuration of N RRAM cells.…”
Section: Filamentary Rram As a Synapsementioning
confidence: 99%
“…Another approach is to combine the abrupt SET operation and binary synaptic devices to implement a stochastic learning rule [64]. Piccolboni et al reported a H f O 2 -based vertical RRAM (VRRAM) technology [65], where each synapse is composed of a stack of RRAMs with one common transistor.…”
Section: Fundamental Components 411 Synapsesmentioning
confidence: 99%
“…Synaptic devices for visual systems using Resistive RAMs have been presented by Kang et al [90], while multistate registers have been developed by Patel et al [91]. Vertical RRAMs have been explored for cochlea and convolutional neural nets by Piccolboni [92], while OxRAM synapses for CNNs have been presented by Garbin et al [93]. ReRAM devices for neuromorphic computing have been explored by Jang et al [94], while an artificial synapse using a memristive switch has been modelled by Wang et al [95].…”
Section: Analog Implementationsmentioning
confidence: 99%