Investigation of the physical properties of Fe:TiO₂-diluted magnetic semiconductor nanoparticles

Abstract

Room temperature M–H plots of some selective samples. Upper inset shows the variation of PL intensities and lower inset shows the variation of band gap with doping concentration.

Bandgap Engineering and Signature of Ferromagnetism in Ti1−xMnxO2­ Diluted Magnetic Semiconductor Nanoparticles: A Valence Band Study

“…A relatively weak violet‐blue emission peak observed at around 423 nm originates from the charge recombination on shallow trap surface states. The blue‐green (≈450 and ≈485 nm) emissions are due to the de‐excitation from lower vibronic levels in Ti 4+ 3 d states of TiO 2 lattice to the deep acceptor levels arise from surface defects . The green band (≈530 nm) emission is possibly related to the defect‐oriented oxygen vacancies and confirming the oxygen deficient nature of all the samples.…”

“…Variation of crystallite (D) size, shifting of 2θ value of the peak of (101) plane and variation of the d 101 with Mn‐concentration ( x ) are shown in Figure . The reduction in crystallite size with Mn‐doping may be explained due to decrease in growth rate as discussed in our previous article . Variation in the lattice parameter may also come into the picture due to development of lattice strain/stress with Mn‐doping.…”

“…The reduction in crystallite size with Mn-doping may be explained due to decrease in growth rate as discussed in our previous article. [10] Variation in the lattice parameter may also come into the picture due to development of lattice strain/stress with Mndoping. Consequently, there may be an increase or decrease in dvalue (inter-planar spacing) depending on the strain present in the samples.…”

“…doped with TM-ions. [5][6][7][8][9][10][11] After the concluding remarks given by Dietl et al on Mn-doped ZnO and GaN, not only the TM-doped ZnO but other doped oxide semiconductors such as TiO 2 , SnO 2 , HfO 2 , and In 2 O 3 were also examined both experimentally and theoretically in search of room temperature ferromagnetism (RTFM) in different conditions and morphologies. [12][13][14][15] The main theme to play with spin-based devices is to establish the ferromagnetism at room temperature or above it in the DMSs.…”

Effect of Concentration Ratio of Precursor-Surfactant Solution on The Performance of Boron-doped ZnO Nanotubes Dye Sensitized Solar Cells

“…Some physical parameters need to be controlled in order to apply ZnO nanostructures for many applications, such as geometrical shape, crystal morphology and orientation [8]. Some efforts have been performed in order to improve the properties of ZnO nanostructures by doping various elements, such as In [9], Al [10], Ga [11] and B [12]. Among them, B-doped ZnO nanotubes are capable of reaching high conductivity, electric mobility and low resistivity [13].…”