Investigation of the phase diagram of the Pb–Ga–Sb system

Hernández-Zarazúa, R; Hernández-Sustaita, M.; Anda, F. de; Mishurnyi, V.A.; Gorbatchev, A.Yu.; Asomoza, R.; Kudriavtsev, Yu.; Godines, J. A.

doi:10.1016/j.tsf.2004.01.054

Cited by 5 publications

(1 citation statement)

References 16 publications

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“…Активная область фотодиода GaSb была получена с использованием свинца. Данный метод позволяет изменить соотношение атомных долей сурьмы и галлия в растворе-расплаве и уменьшить концентрацию природных структурных дефектов в GaSb и его твердых растворах [8][9][10]. С ростом приведенной концентрации сурьмы в жидкой фазе X *…”

Section: получение экспериментальных образцовunclassified

Фотодиоды для ближней инфракрасной области спектра на основе GaSb/GaAlAsSb-гетероструктур

Куницына¹,

Андреев²,

Коновалов³

et al. 2018

Физика И Техника Полупроводников

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Созданы и исследованы неохлаждаемые GaSb/GaAlAsSb-фотодиоды для спектрального диапазона 1.1−1.85 мкм. Уникальный метод выращивания GaSb из свинцовых растворов-расплавов позволил достичь низкой концентрации носителей в активной области n = 2 • 10 15 см −3. Емкость фотодиодов составляла 70−110 пФ при диаметре чувствительной площадки 300 мкм и 150−250 пФ при диаметре 500 мкм соответственно. Для приборов на основе GaSb разработанные фотодиоды характеризуются высокой спектральной чувствительностью S λ = 0.95 А/Вт в максимуме, относительно малой величиной плотности обратного темнового тока j = (4−9) • 10 −3 А/см 2 при Urev = 1.0−2.0 В, высоким быстродействием (время отклика 5−10 нс).

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Section: получение экспериментальных образцовunclassified

Фотодиоды для ближней инфракрасной области спектра на основе GaSb/GaAlAsSb-гетероструктур

Куницына¹,

Андреев²,

Коновалов³

et al. 2018

Физика И Техника Полупроводников

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Influence of Pb vs Ga solvents during liquid phase epitaxy on the optical and electrical properties of GaSbBi layers

Sharma

Das

Gazi

et al. 2019

Journal of Applied Physics

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We have investigated the influence of Pb vs Ga solvents during the liquid phase epitaxial growth of GaSbBi layers on the overall physical, optical, and electrical properties of the material. 10 K photoluminescence (PL) measurements show narrower PL linewidths in layers grown from the Pb solvent compared to that obtained for layers grown under similar conditions using Ga as the solvent. This is an indication of the improved crystalline quality of the material grown from the Pb solvent. GaSbBi layers grown from Pb solvents show a reduction of the carrier concentration by over one order of magnitude than that measured in the corresponding materials grown from Ga solvents. Detailed analysis of the core level transitions, revealed by X-ray photoelectron spectroscopy, indicates the generation of a lesser number of VGa and antisite GaSb defects responsible for the residual hole concentration in GaSb and GaSbBi layers grown from Pb solvents than in the same materials grown using Ga as the solvent. This is suggested as the main reason for the observed reduction of carrier concentration in the layers grown from the Pb solvent.

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Temperature-dependent ultrafast hot carrier dynamics in the dilute bismide alloy GaSb1−xBix (x ≾ 0.4%)

Sharma,

Sreerag,

Kini

2024

Journal of Applied Physics

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We report temperature-dependent hot carrier dynamics in liquid-phase epitaxy-grown GaSb1−xBix epilayers with dilute amounts of Bi (x ≾ 0.4%). Degenerate pump–probe (λ = 800 nm) transient reflectivity (PPTR) was used to investigate the carrier dynamics in the epilayers. The PPTR signal consists of two transient processes (fast and slow) at all temperatures for all epilayers. The fast, hot carrier relaxation time, which is attributed to the combined effect of intervalley scattering and thermalization of carriers below cryogenic temperatures (<100 K), is observed to increase with an increase in temperature (≈0.8–2 ps at 6.6 K and ≈4–5 ps at 300 K). However, at higher temperatures (>100 K), the interband CHSH-Auger recombination process affects the band-to-band recombination, leading to an increase in the slower decay time. The findings offer crucial insights for optimizing GaSbBi for hot carrier solar cell applications.

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Investigation of the phase diagram of the Pb–Ga–Sb system

Cited by 5 publications

References 16 publications

Фотодиоды для ближней инфракрасной области спектра на основе GaSb/GaAlAsSb-гетероструктур

Фотодиоды для ближней инфракрасной области спектра на основе GaSb/GaAlAsSb-гетероструктур

Influence of Pb vs Ga solvents during liquid phase epitaxy on the optical and electrical properties of GaSbBi layers

Temperature-dependent ultrafast hot carrier dynamics in the dilute bismide alloy GaSb1−xBix (x ≾ 0.4%)

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