Investigation of the kinetics of crystallisation of Al/a-Ge bilayer by electrical conductivity measurement

Kovàcs, István; Harmat, P.; Sulyok, A.; Radnóczi, G.

doi:10.1016/s0040-6090(97)00656-1

Cited by 12 publications

(5 citation statements)

References 14 publications

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“…A few results have also been reported for the Al-induced crystallization of amorphous Ge films [19][20][21][22], however the available experimental evidence at present is still too limited to allow any definitive conclusions. The situation is even worse for SiGe-alloys.…”

Section: Aluminium-induced Crystallization Of Sige Filmsmentioning

confidence: 99%

Thin polycrystalline SiGe films by aluminium‐induced layer exchange

Lechner

Buschbeck

Gjukic

et al. 2004

phys. stat. sol. (c)

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Recent results concerning the aluminium-induced crystallization of thin SiGe alloy films are reviewed. This crystallization process can be employed throughout the entire alloy range and results in polycrystalline material without a significant amount of phase separation. The structural, optical, and electronic properties of the polycrystalline SiGe films have been determined by a variety of techniques and for different Ge contents. The use of such films in thin film solar cells is discussed.

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Section: Aluminium-induced Crystallization Of Sige Filmsmentioning

confidence: 99%

Thin polycrystalline SiGe films by aluminium‐induced layer exchange

Lechner

Buschbeck

Gjukic

et al. 2004

phys. stat. sol. (c)

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“…Each of these types requires a different type of process analytical tool or method for the process progress evaluation. Advances have been made in the modeling, monitoring, and control of the crystals [ 33 ] and one-dimensional PAT evaluations, involving combined cooling and antisolvent crystallization by measuring temperatures and analyzing microscopic images of crystals [ 34 ], along with observation of kinetics [ 35 ]. Electrical resistance tomography is one of the novel process analytical tools used to monitor the crystallization process.…”

Section: Introductionmentioning

confidence: 99%

Quantitative Evaluations with 2d Electrical Resistance Tomography in the Low-Conductivity Solutions Using 3d-Printed Phantoms and Sucrose Crystal Agglomerate Assessments

Rao

Sattar

Wajman

et al. 2021

Sensors

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Crystallization is a significant procedure in the manufacturing of many pharmaceutical and solid food products. In-situ electrical resistance tomography (ERT) is a novel process analytical tool (PAT) to provide a cheap and quick way to test, visualize, and evaluate the progress of crystallization processes. In this work, the spatial accuracy of the nonconductive phantoms in low-conductivity solutions was evaluated. Gauss–Newton, linear back projection, and iterative total variation reconstruction algorithms were used to compare the phantom reconstructions for tap water, industrial-grade saturated sucrose solution, and demineralized water. A cylindrical phantom measuring 10 mm in diameter and a cross-section area of 1.5% of the total beaker area was detected at the center of the beaker. Two phantoms with a 10-mm diameter were visualized separately in noncentral locations. The quantitative evaluations were done for the phantoms with radii ranging from 10 mm to 50 mm in demineralized water. Multiple factors, such as ERT device and sensor development, Finite Element Model (FEM) mesh density and simulations, image reconstruction algorithms, number of iterations, segmentation methods, and morphological image processing methods, were discussed and analyzed to achieve spatial accuracy. The development of ERT imaging modality for the purpose of monitoring crystallization in low-conductivity solutions was performed satisfactorily.

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“…Detailed investigations of AIC of Si have been carried out by many researchers (14)(15)(16)(17). On the other hand, there are only a few reports for AIC of Ge (18)(19)(20)(21), and the available experimental information is still too limited to reveal the mechanism of AIC of Ge. Understanding of AIC of Ge is expected to establish a new technique for formation of high-quality poly-SiGe at a low temperature.…”

Section: Introductionmentioning

confidence: 99%

Comparative Study of Al-Induced Crystallization for Poly-Si and Ge on Insulating Film

et al. 2007

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Al-induced crystallization (AIC) of Si and Ge has been comparatively investigated to realize poly-Si and poly-Ge layers on insulating films. For amorphous-Si (a-Si)/Al stacked structures, poly-Si oriented to the (111) direction was formed after annealing (450oC, 40h), and inversion of Si/Al layers occurred completely. On the other hand, poly-Ge with random orientations was formed in the local areas (diameter: 20 μm) of the Al layers after annealing (350oC, 150h) for a-Ge/Al stacked structures. In addition, inversion of Ge/Al layers did not occur. Understanding of AIC of Ge is necessary to establish a new technique for formation of high-quality poly-SiGe at low temperatures.

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Investigation of the kinetics of crystallisation of Al/a-Ge bilayer by electrical conductivity measurement

Cited by 12 publications

References 14 publications

Thin polycrystalline SiGe films by aluminium‐induced layer exchange

Thin polycrystalline SiGe films by aluminium‐induced layer exchange

Quantitative Evaluations with 2d Electrical Resistance Tomography in the Low-Conductivity Solutions Using 3d-Printed Phantoms and Sucrose Crystal Agglomerate Assessments

Comparative Study of Al-Induced Crystallization for Poly-Si and Ge on Insulating Film

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