Investigation of the intershell higher order resonant recombination and polarization of X‐ray emission of B‐like silicon ions

Abstract

K‐shell dielectronic, trielectronic, and quadruelectronic recombination and polarization of X‐ray emission have been studied for the highly charged Si9+ ions in the initial ground state 2P1/2 and the metastable state 2P3/2 using the Flexible Atomic Code. It is found that the resonant recombination cross section from the long‐lived metastable state is comparable in magnitude with that of the ground state, so it is important for plasma diagnostics. For Si9+(2P1/2), trielectronic recombination contributions of nearly 25% to the total resonant recombination strength are predicted, which is less than previous calculations. We compare the degree of linear polarization for the eleven dominant resonant recombination satellite lines from the initial parent Si9+(2P1/2) and Si9+(2P3/2) ions. For the same X‐ray lines, large variations of polarization are found between 2P1/2 and 2P3/2, which can be employed to diagnose formation mechanisms of intermediate resonance states and corresponding X‐ray lines.