Investigation of the Interfacial Region Formed During ZnO Growth on Si100 Substrate Using Singlesource CVD

Koch, M. H.; Mar, G. L.; Hartmann, Andreas; Lamb, Robert N.

doi:10.1002/(sici)1096-9918(19960916)24:9<675::aid-sia166>3.3.co;2-q

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“…The accuracy of this method is on the order of 25% , have shown that the continuous growth model for the present system is applicable for film thicknesses above 15 Å.…”

Section: Methodsmentioning

confidence: 76%

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Self-Texture in the Initial Stages of ZnO Film Growth

Koch¹,

Hartmann²,

Lamb³

et al. 1997

J. Phys. Chem. B

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X-ray absorption spectroscopy has been used to investigate the self-texture of ZnO films grown on Si(100) (lattice-mismatched substrate) by single-source chemical vapor deposition (SS-CVD) using Zn 4 O(acetate) 6 as precursor. For this system nonepitaxial growth of polycrystalline, c-axis oriented films can be controlled by addition of a water ambient during the deposition for a large variety of substrates. Angle dependent near edge X-ray absorption fine structure spectroscopy (NEXAFS) was used to study the orientation of the adsorbent molecules as a function of both water ambient used during the deposition and film thickness. The onset of self-structuring under optimum growth conditions (highest water pressure, P H 2 O ) 5 × 10 -4 mbar) is found to occur at film thicknesses on the order of 50 Å. The role of the water ambient during the film deposition is discussed using a kinetic model in which lattice stabilization due to filling of oxygen vacancies promotes the film crystallization. The model is used to explain the measured changes in the atomic environment of the oxygen atoms in the deposited ZnO films with variation in ambient water used. The interfacial restrictions in nonepitaxial CVD film growth are discussed. Our results indicate that in addition to structural restrictions due to lattice mismatch the chemical reactivity of the substrate material clearly must be considered.

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“…The accuracy of this method is on the order of 25% , have shown that the continuous growth model for the present system is applicable for film thicknesses above 15 Å.…”

Section: Methodsmentioning

confidence: 76%

“…The films were deposited at 673 K substrate temperature, and the sample then transferred into the analysis chamber where it cooled to room temperature. Prior to each growth cycle, the Si(100) substrate was argon sputter cleaned and then annealed at 900 K. This procedure was found to create a substrate free of any major structural damages …”

Section: Methodsmentioning

confidence: 99%