Investigation of the Impact of Al Mole-Fraction on the Consequences of RF Stress on&lt;tex&gt;$hbox Al_xhbox Ga_1-xhbox N/GaN$&lt;/tex&gt;MODFETs

Valizadeh, Pouya; Pavlidis, D.

doi:10.1109/ted.2005.852543

Cited by 45 publications

(24 citation statements)

References 14 publications

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“…In order to further validate the arguments of the previously published results on the effects of RF and dc stress and their link to the semipermanent current collapse of unpassivated AlGaN/GaN MODFETs [4], [5], further noise-based investigations were performed, and they are reported in this paper. To reveal the causes of current collapse, the test temperature was increased from room temperature to 500 K, and the lower frequency limit of the measurements was reduced.…”

Section: Introductionmentioning

confidence: 68%

High-Temperature Very Low Frequency Noise-Based Investigation of Slow Transients in AlGaN/GaN MODFETs

Valizadeh

2008

IEEE Trans. Device Mater. Relib.

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The variations of the very low frequency noise (i.e., 100 mHz to 100 kHz) and the dc characteristics of unpassivated AlGaN/GaN modulation-doped field-effect transistors (MODFETs) with temperature from 300 to 500 K are investigated. The rise in temperature to 500 K is shown to reveal generation-recombination (G-R) noise characteristics within the 100 mHz to 1 Hz frequency range. It is experimentally evidenced that these manifestations can predict the existence of very slow transients in the drain-current characteristics of AlGaN/GaN MODFETs. Due to the very long time constant of the transients at room temperature (i.e., on the order of several hours or even days), the observed features can be classified as semipermanent. The comparison between the energy levels predicted by the noise data and the levels previously reported in literature supports these observations. Index Terms-Current transient, low-frequency noise (LFN), modulation-doped field-effect transistor (MODFET), trap level.

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Section: Introductionmentioning

confidence: 68%

High-Temperature Very Low Frequency Noise-Based Investigation of Slow Transients in AlGaN/GaN MODFETs

Valizadeh

2008

IEEE Trans. Device Mater. Relib.

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“…The gate-lag and drain-lag measurements [3], [9], [10] and drain current DLTS technique [25] are good examples of currenttransient-based techniques that have been used in GaN FETs. In addition, frequency-dependent transconductance measurement and low-frequency noise measurement have been utilized to study the trapping behavior [21], [22], [26].…”

Section: Methodsmentioning

confidence: 99%

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

Joh

Alamo

2011

IEEE Trans. Electron Devices

379

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Abstract-Trapping is one of the most deleterious effects that limit performance and reliability in GaN HEMTs. In this paper, we present a methodology to study trapping characteristics in GaN HEMTs that is based on current-transient measurements. Its uniqueness is that it is amenable to integration with electrical stress experiments in long-term reliability studies. We present the details of the measurement and analysis procedures. With this method, we have investigated the trapping and detrapping dynamics of GaN HEMTs. In particular, we examined layer location, energy level, and trapping/detrapping time constants of dominant traps. We have identified several traps inside the AlGaN barrier layer or at the surface close to the gate edge and in the GaN buffer.

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“…Simulation results and experimental data presented in this section belong to a device with Al molefraction (x) of 0.3, low-field mobility (µ n ) of 1300 cm 2 /V. s, gate length (L g ) of 0.7 µm, gate width (W) of 200 µm, barrier height (d) of 17 nm and the threshold voltage (V t ) of -3.5 V. The device is biased at T = 300 K, V GS = 0 V, and V DS = 0.6 V. With these parameters, selected from [11], the equilibrium value of the first sub-band energy level and the 2DEG concentration are ~ 0.242 eV and ~2 13 10…”

Section: Resultsmentioning

confidence: 99%

Non-fundamental low frequency noise theory: Drain noise-current modeling of AlGaN/GaN HFETs

Manouchehri

Valizadeh

Kabir

2011

2011 21st International Conference on Noise and Fluctuations

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This work presents a theoretical study on the 1/f low frequency noise (LFN) based on the fluctuations in the number of carriers in the two-dimensional electron gas (2DEG) channel of AlGaN/GaN self-aligned HFETs. This study validates the role of thermally activated trap levels on 1/f LFN characteristics. Simulation results confirm that the low frequency noise bahvior follows characteristic of 1/f γ with frequency exponent γ between 0 and 2. At room temperature the simulation results are compared with the experiments. The effect of temperature is also studied on the noise behavior. It is found that the frequency exponent can vary with temperature.

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Investigation of the Impact of Al Mole-Fraction on the Consequences of RF Stress on<tex>$hbox Al_xhbox Ga_1-xhbox N/GaN$</tex>MODFETs

Cited by 45 publications

References 14 publications

High-Temperature Very Low Frequency Noise-Based Investigation of Slow Transients in AlGaN/GaN MODFETs

High-Temperature Very Low Frequency Noise-Based Investigation of Slow Transients in AlGaN/GaN MODFETs

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

Non-fundamental low frequency noise theory: Drain noise-current modeling of AlGaN/GaN HFETs

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