Investigation of the Hall Effect in Rectangular Quantum Wells With a Perpendicular Magnetic Field in the Presence of a High-Frequency Electromagnetic Wave

Abstract

The Hall effect is theoretically studied in a rectangular quantum well (RQW) with infinite barriers subjected to a crossed dc electric field and magnetic field (the magnetic field is oriented perpendicularly to the barriers) in the presence of a high-frequency electromagnetic wave (EMW). By using the quantum kinetic equation for electrons interacting with acoustic phonons at low temperatures, we obtain analytical expressions for the conductivity tensor as well as the Hall coefficient (HC). Numerical results for the AlGaN/GaN RQW show the Shubnikov-de Haas (SdH) oscillations in the magnetoresistance (MR) whose period does not depend on the temperature and amplitude decreases with increasing temperature. In the presence of the EMW, the MR shows maxima at Ω/ωc = 1, 2, 3, . . . and minima at Ω/ωc = 3/2, 5/2, 7/2, . . . (Ω and ωc are the EMW and the cyclotron frequencies, respectively), and with increasing of the EMW amplitude the MR approaches zero. Obtained results are in accordance with recent experimental data and in good agreement with other theories in two-dimensional (2D) electron systems. The results for the HC show a saturation of the HC as the magnetic field or the EMW frequency increases. Furthermore, in the region of large magnetic field the HC depends weakly on the well-width.

The Ettingshausen coefficient in quantum wells under influence of laser radiation in the case of electron-optical phonon interaction

“…However, the value of the EC in QWPP obtained in this case is 2 10 times larger than the EC in bulk semiconductors [15]. Figure 3 shows that the dependence of the EC on quantum well length is non-linear and decreases to zero when quantum well length increases.…”

“…It leads to the appearance of size effects and alters most of the physical properties of materials [1]. As a result, the properties of low-dimensional systems such as: the Hall effect [2][3][4] absorption of electromagnetic waves, relative magnetoresistance, etc [5][6][7][8][9] are very different from the bulk semiconductors that the previous work studied [10][11][12][13]. The Ettingshausen effect which has just been researched in bulk semiconductors [14][15][16][17] is one of the electrical, magnetic and optical effects of semiconductor systems.…”

“…We concluded the results originated from reduced dimensions effects and the influence of laser radiation on the EC. Especially, when we studied the dependence of the EC on temperature, we realized that the EC in QWPP was 2 10 times bigger than that in bulk semiconductors. This was the difference between the EC in QWPP and the EC in bulk semiconductors.…”

Hall Effect on the Doped Semiconductor Superlattice with an In-plane Magnetic Field Under Influence of an Intense Electromagnetic Wave

“…By using Hamiltonian (1) and procedures as in the previous works [2][3][4][5][6], we obtain an equation for the partial current density in the single (constant) relaxation time approximation. To do this, we assume that the electrons system is degenerate and the distribution function has the form of Heaviside step function.…”

“…The propagation of an EMW in materials leads to the change in the scattering probability of carriers, and thus, leads to their unusual behaviors in comparison to the case of the absence of the EMW. In some recent works, we have used the quantum kinetic equation method to study the influence of a high-frequency EMW on the Hall effect in parabolic quantum wells [2], doping semiconductor superlattices [3] at high temperatures, and in rectangular quantum wells at low temperature [4]. We also have used this method to investigate the acoustoelectric and magnetoacoustoelectric effects [5,6].…”