Investigation of the growth and properties of single-crystalline aluminum nitride nanowires

Investigation on low‐temperature sintered AlN nanoceramics with high thermal conductivity

“…However, a comparison of the positions of these Raman peaks with those for bulk AlN revealed minor shifts of 2 cm −1 to shorter wavelengths (blue shift) for the A 1 (TO), E 2 (high), and E 1 (TO) modes. The blue shift of the phonon frequencies of AlN nanowires has been reported to be a consequence of compressive stress in the lattice . There are no characteristic peaks of second phase aluminates observed from Raman scattering analysis.…”

Long-range ordered vertical III-nitride nano-cylinder arrays via plasma-assisted atomic layer deposition

“…[22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40] Strong cathode-luminscence and/or photoluminescence from GaN nanopillars has been observed as compared to single crystalline GaN thin films, which is attributed to the high crystal quality, strain/ stress reduction, and improved anti reflection properties of GaN nanopillars. 36,37 AlN nanostructures have been fabricated in the form of nanofibers, 41 nanorods, 42,43 and nanowires, [44][45][46][47] mainly using electrospinning, CVD, and molecular beam epitaxy (MBE) techniques. Similar to AlN, InN nanostructures have also been synthesized in the form of nanowires, [48][49][50][51][52][53][54][55][56] nanoparticles, [57][58][59][60] and nanorods [61][62][63][64][65] using high-temperature epitaxial...…”

“…Uniform and vertically oriented nanocylinder arrays confirm the ability to precisely tune III-nitride nanostructure geometry via AAO-templated PA-ALD in comparison with other commonly used high-temperature growth techniques, which mainly allow one to obtain elongated nanostructures without three-dimensional precision thickness control. [36][37][38][39][40][41][42][43][44][45][46][47] Ordered vertical GaN, AlN, and InN hollow nano-cylinder arrays have been characterized using scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), transmission electron microscopy (TEM), selected area electron diffraction (SAED), grazing incidence X-ray diffraction (GIXRD), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) measurements. The material properties of nanostructured III-nitride materials are compared with the thin-film counterparts, which were grown with the very same low-temperature HCPA-ALD technique on flat substrates.…”

EFFECT OF REACTION CONDITIONS ON THE SYNTHESIS OF ULTRAFINE AlN POWDER WITH GLUCOSE AS CARBON SOURCE

“…AlN ceramics with excellent comprehensive performance can be produced by synthesizing AlN powder with high purity, small particles, high sintering activity, and stable performance. Present methods for AlN powder synthesis include carbothermal reduction nitridation (CRN) [10][11][12], aluminum powder direct nitriding [13], self-propagating high temperature synthesis [14], and chemical vapor deposition [15]. By contrast, CRN is a simple process with a wide range of raw materials and low production cost.…”