Investigation of the evolution of nitrogen defects in flash-lamp-annealed InGaZnO films and their effects on transistor characteristics

Eom, Tae-yil; Ahn, Chee-Hong; Kang, Jun-Gu; Salman, Muhammad; Lee, Sun-Young; Kim, Yong‐Hoon; Lee, Hoo-Jeong; Kang, Chan‐mo; Kang, Chiwon

doi:10.7567/apex.11.061104

Cited by 10 publications

(8 citation statements)

References 33 publications

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“…When high-energy pulses with rapid flash rates are used, it is likely that the entire substrate and film stack are at the same elevated temperature because the transient heating criteria are not met. In fact, some reports using pulsed light on silicon have confirmed this by measuring elevated temperatures in the Si substrate with a thermocouple. , Thus, photonic curing on high thermal conductivity substrates such as silicon requires careful consideration of pulse design and high radiant exposure to achieve sufficiently high curing temperatures for oxides.…”

Section: Resultsmentioning

confidence: 98%

“…Despite the promising capabilities of photonic curing, there are two key factors that have limited the ability to efficiently cure oxide semiconductor TFTs. First, many studies processed oxide semiconductor thin films on silicon substrates. − ,− ,, However, when substrates with high thermal conductivity are used, sustaining an elevated temperature in the thin film becomes challenging because the high thermal conductivity substrates act as a heat sink. In fact, the power required to reach a given temperature is proportional to the square root of the substrate thermal conductivity .…”

Section: Resultsmentioning

confidence: 99%

“…The desire to create high-quality flexible transistors on low-temperature plastic substrates has driven an investigation into alternative thermal processing methods for oxide semiconductors. Some of the most popular are microwave annealing, photochemical activation, and pulsed-light processes based on flashlamps. − The latter, commonly known as photonic curing, is particularly advantageous as compared to conventional thermal annealing because photonic curing offers the ability to rapidly process films at high temperatures, greatly reducing processing time. Photonic curing on both silicon − ,,− and glass substrates ,− , has been reported for various oxide semiconductor compositions.…”

Section: Introductionmentioning

confidence: 99%

“…Some of the most popular are microwave annealing, photochemical activation, and pulsed-light processes based on flashlamps. − The latter, commonly known as photonic curing, is particularly advantageous as compared to conventional thermal annealing because photonic curing offers the ability to rapidly process films at high temperatures, greatly reducing processing time. Photonic curing on both silicon − ,,− and glass substrates ,− , has been reported for various oxide semiconductor compositions. These reports have studied the effects of the number of pulses, pulse energy, and fire rate on TFT performance and demonstrated the ability to cure and produce TFTs with photonic curing.…”

Section: Introductionmentioning

confidence: 99%

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Photonic Curing of Solution-Processed Oxide Semiconductors with Efficient Gate Absorbers and Minimal Substrate Heating for High-Performance Thin-Film Transistors

et al. 2021

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In this study, photonic curing is used to rapidly and effectively convert metal-oxide sol−gels to realize high-quality thin-film transistors (TFTs). Photonic curing offers advantages over conventional thermal processing methods such as ultrashort processing time and compatibility with low-temperature substrates. However, previous work on photonically cured TFTs often results in significant heating of the entire substrate rather than just the thin film at the surface. Here, sol−gel indium zinc oxide (IZO)-based TFTs are photonically cured with efficient gate absorbers requiring as few as five pulses using intense white light delivering radiant energy up to 6 J cm −2 . Simulations indicate that the IZO film reaches a peak temperature of ∼590 °C while the back of the substrate stays below 30 °C. The requirements and design guidelines for photonic curing metal-oxide semiconductors for high-performance TFT applications are discussed, focusing on the importance of effective gate absorbers and optimized pulse designs to efficiently and effectively cure sol−gel films. This process yields TFTs with a field-effect mobility of 21.8 cm 2 V −1 s −1 and an I on /I off ratio approaching 10 8 , which exceeds the performance of samples annealed at 500 °C for 1 h. This is the best performance and highest metal-oxide conversion for photonically cured oxide TFTs achieved to date that does not significantly heat the entire thickness of the substrate. Importantly, the conversion from sol−gel precursors to the semiconducting metal-oxide phase during photonic curing is on par with thermal annealing, which is a significant improvement over previous pulsed-light processing work. The use of efficient gate absorbers also allows for the reduction in the number of pulses and efficient sol−gel conversion.

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Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Photonic Curing of Solution-Processed Oxide Semiconductors with Efficient Gate Absorbers and Minimal Substrate Heating for High-Performance Thin-Film Transistors

et al. 2021

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“…Therefore, many researches are devoted to reducing the density of defects during the fabrication, including the optimization of oxygen partial pressure [4], the increase of fabrication temperature, and the reduction of deposition power. In addition, post-annealing is recognized as an essential method to enhance the quality of the channel layer as well as its adjacent interfaces [5].…”

Section: Introductionmentioning

confidence: 99%

Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors

Wang

Furuta

2019

Beilstein J. Nanotechnol.

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This study examines the effect of the annealing temperature on the initial electrical characteristics and photo-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). The extracted electrical parameters from transfer curves suggest that a low-temperature treatment maintains a high density of defects in the IGZO bulk, whereas high-temperature annealing causes a quality degradation of the adjacent interfaces. Light of short wavelengths below 460 nm induces defect generation in the forward measurement and the leakage current increases in the reverse measurement, especially for the low-temperature-annealed device. The hysteresis after negative-bias-illumination-stress (NBIS) is quantitatively investigated by using the double-scan mode and a positive gate pulse. Despite the abnormal transfer properties in the low-temperature-treated device, the excited holes are identically trapped at the front interface irrespective of treatment temperature. NBIS-induced critical instability occurs in the high-temperature-annealed TFT.

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Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Yarali

Koutsiaki

Faber

et al. 2019

Adv Funct Materials

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(1 of 37)high mobility (µ) (even in amorphous phase), wide bandgap (transparent in the visible range), and the ability to be controllably doped. Importantly, they can be grown into thin films and various nanostructures with different scalable deposition techniques, including vacuum-based methods such as physical vapor deposition (PVD) [7,8] and chemical vapor deposition (CVD) [9] as well as solution-based processes such as spray [10] and spin coating. [11] Moreover, the resulting layers can be easily patterned using standard fabrication procedures and as such can be integrated into state-of-the-art processes for (opto)electronic applications. The above-mentioned capabilities have led to a plethora of applications such as switching backplanes for displays, transparent and flexible electronics, integrated circuits (ICs), photovoltaics (PVs), organic light-emitting diodes (OLEDs), capacitors, batteries, photocatalytic devices, electrochromics and memory devices, to name but a few. [8,[12][13][14] Because of their ability to be doped, their electronic properties can be tuned from dielectrics to semiconductors and conductors. This characteristic versatility has recently been exploited to stretch the range of their applications to new technological sectors, such as plasmonics in the near infrared and midinfrared spectral ranges. [12,15] One of the driving applications of metal oxides is in thinfilm transistors (TFTs) for large area electronics such as current driven optical displays and ICs. Following the early demonstrations, [16] most effort focused on the fabrication and processing of metal oxides TFTs paying particular attention to the device performance and applications. [1,5,6,17] Especially when processed over large areas, as in the case for display applications, the complexity to precisely control the device reliability and reproducibility becomes a challenging aspect of any TFT technology. To that respect, solution-based techniques progressed rapidly due to their lower cost and higher throughput compared to vacuum-based techniques. In both cases, the metal-oxide deposition has so far been limited to high processing temperatures (>250 °C) (Figure 1a) which renders the technology incompatible with inexpensive, temperature-sensitive substrates such as polymers, the material class of choice for various high throughput manufacturing techniques such as roll-to-roll (R2R) and sheet-to-sheet (S2S)Over the past few decades, significant progress has been made in the field of photonic processing of electronic materials using a variety of light sources. Several of these technologies have now been exploited in conjunction with emerging electronic materials as alternatives to conventional hightemperature thermal annealing, offering rapid manufacturing times and compatibility with temperature-sensitive substrate materials among other potential advantages. Herein, recent advances in photonic processing paradigms of metal-oxide thin-film transistors (TFTs) are presented with particular emphasis on the use of various light sour...

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Investigation of the evolution of nitrogen defects in flash-lamp-annealed InGaZnO films and their effects on transistor characteristics

Cited by 10 publications

References 33 publications

Photonic Curing of Solution-Processed Oxide Semiconductors with Efficient Gate Absorbers and Minimal Substrate Heating for High-Performance Thin-Film Transistors

Photonic Curing of Solution-Processed Oxide Semiconductors with Efficient Gate Absorbers and Minimal Substrate Heating for High-Performance Thin-Film Transistors

Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

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