Exploring two-dimensional (2D) materials with a small
carrier effective
mass and suitable band gap is crucial for the design of metal oxide
semiconductor field effect transistors (MOSFETs). Here, the quantum
transport properties of stable 2D SbSeBr are simulated on the basis
of first-principles calculations. Monolayer SbSeBr proves to be a
competitive channel material, offering a suitable band gap of 1.18
eV and a small electron effective mass (m
e*) of 0.22m
0. The 2D SbSeBr field effect
transistor (FET) with 8 nm channel length exhibits a high on-state
current of 1869 μA/μm, low power consumption of 0.080
fJ/μm, and small delay time of 0.062 ps, which can satisfy the
requirements of the International Technology Roadmap for Semiconductors
for high-performance devices. Moreover, despite the monolayer SbSeBr
having an isotropic m
e*, the asymmetrical
band trends enable SbSeBr FETs to display transport orientation, which
emphasizes the importance of band trends and provides valuable insights
for selecting channel materials.