Investigation of the Electrode Materials in Conductive Bridging RAM from First-Principle

Ducry, Fabian; Portner, Kevin; Andermatt, Samuel; Luisier, Mathieu

doi:10.1109/sispad.2018.8551694

Cited by 2 publications

(2 citation statements)

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“…Three device studies have been selected to illustrate the quantum transport simulation approaches presented in the previous section and to demonstrate their capabilities: (1) the ON-state properties and electro-thermal effects of a single Cu/a-SiO 2 /Cu CBRAM cell, 31 (2) the dependence of these properties on the thickness of the oxide layer, 10 and (3) the impact of the metal contact on the device current in a given filament configuration will be investigated. 95 These three examples show how ab initio device simulations can reveal the physics behind the operation of atomic-scale components, thus accelerating and improving their design. The procedure to obtain the atomic structures and perform QT simulations is summarized here.…”

Section: Applicationsmentioning

confidence: 99%

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Electro-thermal transport in disordered nanostructures: a modeling perspective

2020

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Section: Applicationsmentioning

confidence: 99%

“…The approximation to use the same active metal for both electrodes facilitates the structure construction and reduces the computational burden. The impact of this approximation on the device characteristics has been analyzed in ref. 95 .…”

Section: Applicationsmentioning

confidence: 99%

Electro-thermal transport in disordered nanostructures: a modeling perspective

2020

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Variability-aware modeling of electrochemical metallization memory cells

Ahmad,

Waser,

Maudet

et al. 2024

Neuromorph. Comput. Eng.

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Resistively switching electrochemical metallization memory (ECM) cells are gaining huge interest, as they are seen as promising candidates and basic building blocks of future computation-in-memory applications. However, especially filamentary-based memristive devices suffer from inherent variability, originating from their stochastic switching behaviour. A variability-aware compact model of Electrochemical Metallization Memory Cells is presented in this work and verified by showing a fit to experimental data. It is an extension of a deterministic model. As this extension consists of several different features allowing for a realistic variability-aware fit, it depicts a unique model comprising physics-based, stochastically and experimentally originating variabilities and reproduces them well. Also, a physics-based model parameter study is executed, which enables a comprehensive view into the device physics and presents guidelines for the compact model fitting procedure.

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Investigation of the Electrode Materials in Conductive Bridging RAM from First-Principle

Cited by 2 publications

References 1 publication

Electro-thermal transport in disordered nanostructures: a modeling perspective

Electro-thermal transport in disordered nanostructures: a modeling perspective

Variability-aware modeling of electrochemical metallization memory cells

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