Investigation of the Effect of Discharge Plasma Stabilization by a Semiconductor

Lebedeva, N. N.; Orbukh, V. I.; Salamov, B. G.

doi:10.1051/jp3:1996155

Cited by 13 publications

(16 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…in darkness and under weak and maximum illumination intensities of light L 1 and L 2 , respectively) when the resistivity of the SI GaAs photodetector is decreased from ρ 1 = 1.3 × 10 8 Ω cm to ρ 3 = 4 × 10 7 Ω cm through illumination. Moreover, the shape of the CVC in a system depends on the voltage increase in the power supply and the illumination intensity [19,30]. It should be noted that CVCs of SI GaAs photodetector show ohmic behavior for d = 143 µm.…”

Section: Resultsmentioning

confidence: 99%

Spatiotemporal Transport Processes in Semiconductor Gas Discharge Structure with GaAs Photodetector

Salamov¹

2008

Acta Phys. Pol. A

View full text Add to dashboard Cite

In a semiconductor gas discharge structure with diameters much larger than an inter-electrode distance, the effects of different parameters (i.e. electrode separation, gas pressure, diameter of the GaAs photodetector, etc.) on electrical breakdown and current oscillations were studied. Non-stationary and non-homogeneous states are generated in the structure, through the spatially uniform irradiation of the semiconductor photodetector. Instabilities occur due to the nonlinear features of the semiconductor photocathode, while the gas discharge serves to visualize transport processes in GaAs. Spatiotemporal variations of current and discharge light emissions are studied with the above-mentioned control parameters. Transformation of the profile and amplitude of the current densities of the filaments in different regions of the current-voltage characteristic are widely studied. Instabilities of spatially non-uniform distributions resulting in the formation of multiple current filaments with increasing voltages above the critical values are observed. A semiconductor gas discharge structure with an N -shaped current-voltage characteristic is analyzed via both the current and discharge light emissions data which shows the electrical instability in the GaAs photodetector.

show abstract

Section: Resultsmentioning

confidence: 99%

Spatiotemporal Transport Processes in Semiconductor Gas Discharge Structure with GaAs Photodetector

Salamov¹

2008

Acta Phys. Pol. A

View full text Add to dashboard Cite

show abstract

“…By applying a high voltage, U 0 , between the Ni contact and the SnO 2 layer, a discharge was ignited in the gap (3). This corresponds to a discharge operating in the Townsend regime (this stable form of discharge is employed in semiconductor gas discharge IR image converters [6,15] with a photosensitive semiconductor photocathode possessing linear CVCs).…”

Section: Methodsmentioning

confidence: 99%

Behaviour of light emission in a semiconductor gas discharge IR image converter

Salamov

2004

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Light emission in the UV and visible (blue) range (330–440 nm) generated by an IR image converter and the possibility of locally increasing the gas discharge light emission for a given photosensitivity of a planar GaAs semiconductor photocathode were studied. The use of metallic patched concentrators with an area of S = 5 × 10−4 cm2 and a density of 400 cm−2 and an IR light to excite the photocathode of the system leads to a fivefold increase in the gas discharge light intensity. In a system with metallic patched concentrators, the local density of gas-discharge light exceeds the density of uniform gas-discharge light in an IR image converter by the same factor by which the working area of the photocathode exceeds the total area of the current concentrators. Moreover, the use of metallic patched concentrators prolongs the working time of the photocathode. The filamentation was primarily due to the formation of a space charge of positive ions in the discharge gap, which changed the discharge from the Townsend to the glow type.

show abstract

“…One of the advantages of this cell compared to the previous one [4] (see figure 1(a)) is the exclusion of ohmic contact on the surface of the semiconductor GaAs plate. Moreover, in this case we exclude the effect of contact phenomena on the shape of the CVC because a spatially homogeneous ohmic contact of high quality is essential for the proper operation of the system shown in figure 1(a).…”

Section: Methodsmentioning

confidence: 99%

“…In ionization systems, image converters, and also in some types of lasers, the semiconducting cathode plays an important role [1][2][3]. Therefore, to study discharge with semiconducting cathodes acquires practical importance [4]. Using a semiconducting cathode with distributed resistance considerably changes the current distribution.…”

Section: Introductionmentioning

confidence: 99%

Spatial stabilization of Townsend discharge in a modified ionization cell with symmetrical short gaps between semiconductor plate and electrodes

Salamov¹,

Akinoglu²,

Lebedeva³

1999

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

A Townsend-type discharge generated in a modified ionization cell with symmetrical short gaps between a high-resistivity semiconductor plate and two planar electrodes is studied. The spatial stabilization of the gas discharge cell with a planar GaAs semiconductor plate is studied over a wide range of gas pressure values 101-342 Torr. The characteristics of the system are obtained both without and with illumination of the semiconductor plate with light of a particular wavelength range to control the photoconductivity of the material. The semiconductor material is found to stabilize the discharge. It is shown that generation of carriers by a gas discharge establishes a positive feedback. A qualitative discussion of this effect is given, which includes avalanche formation in a system having high-resistivity semiconductor for the Townsend discharge region. Recording of the current-voltage characteristic between parallel-plane electrodes is realized.

show abstract

Investigation of the Effect of Discharge Plasma Stabilization by a Semiconductor

Cited by 13 publications

References 0 publications

Spatiotemporal Transport Processes in Semiconductor Gas Discharge Structure with GaAs Photodetector

Spatiotemporal Transport Processes in Semiconductor Gas Discharge Structure with GaAs Photodetector

Behaviour of light emission in a semiconductor gas discharge IR image converter

Spatial stabilization of Townsend discharge in a modified ionization cell with symmetrical short gaps between semiconductor plate and electrodes

Contact Info

Product

Resources

About