INVESTIGATION OF THE EFFECT OF OXYGEN AND SUBSTRATE BIAS ON THE DEFECT STRUCTURE OF SPUTTER-DEPOSITED SnOX FILMS

Positron annihilation characteristics in mesostructural silica films with various porosities

“…26,27 As it can be seen in Figure 2, all experimental points fit well to a straight line of slope k ¼ 0.87 6 0.03 for the as-deposited films. This is because these F127-silica composites have the similar chemical structure with various F127 ratios.…”

“…As mentioned above, for a group of similar film samples, a linear relationship between S parameters and W parameters can occur not only when positrons annihilate in the same defect 25,26 but also when the annihilation takes place in several positron states and/or trapping sites provided that certain relationships between the relative concentration of the positron states and/or trapping sites exist. 26,27 As it can be seen in Figure 2, all experimental points fit well to a straight line of slope k ¼ 0.87 6 0.03 for the as-deposited films.…”

Magnetron Sputtered SnOxFilms on Tin Probed by Slow Positron Implantation Spectroscopy

“…Some of the most important factors affecting the microstructure of sputtered films are: the kind and the temperature of substrate, the rate of deposition of the condensing atoms, the pressure of the working gas, the substrate surface roughness, and substrate bias and bombardment of the (623) surface with ions or electrons. The increase in oxygen pressure leads to the formation of films with different grain size and a mixture of different phases and defect structures [5]. Slow positron implantation spectroscopy (SPIS) has been used to successfully investigate a variety of thin film structures [6][7][8].…”