2021
DOI: 10.1016/j.apsusc.2021.149035
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Investigation of the effect of different cleaning forces on Ce-O-Si bonding during oxide post-CMP cleaning

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Cited by 35 publications
(32 citation statements)
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“…As for CeF 3 :Yb 3+ , Er 3+ /Fe-ATP, the wavenumber of 1410 cm –1 is ascribed to the Ce–F bond, and the 3448 cm –1 is attributed to the stretching vibration of −OH in absorbed water. Compared to Fe-ATP and ATP, the peak of CeF 3 :Yb 3+ , Er 3+ /Fe-ATP near 803 cm –1 is broadened, which may be tentatively associated with the stretching vibration of the Si–O–Ce bond and attributed to the construction of the CeF 3 :Yb 3+ , Er 3+ /Fe-ATP heterostructure …”
Section: Resultsmentioning
confidence: 92%
See 1 more Smart Citation
“…As for CeF 3 :Yb 3+ , Er 3+ /Fe-ATP, the wavenumber of 1410 cm –1 is ascribed to the Ce–F bond, and the 3448 cm –1 is attributed to the stretching vibration of −OH in absorbed water. Compared to Fe-ATP and ATP, the peak of CeF 3 :Yb 3+ , Er 3+ /Fe-ATP near 803 cm –1 is broadened, which may be tentatively associated with the stretching vibration of the Si–O–Ce bond and attributed to the construction of the CeF 3 :Yb 3+ , Er 3+ /Fe-ATP heterostructure …”
Section: Resultsmentioning
confidence: 92%
“…Compared to Fe-ATP and ATP, the peak of CeF 3 :Yb 3+ , Er 3+ /Fe-ATP near 803 cm −1 is broadened, which may be tentatively associated with the stretching vibration of the Si−O−Ce bond and attributed to the construction of the CeF 3 :Yb 3+ , Er 3+ /Fe-ATP heterostructure. 28 TEM Analysis. The TEM patterns of CeF 3 :Yb 3+ , Er 3+ /Fe-ATP nanocomposites with various loading amounts and the corresponding EDS image are given in Figure 4.…”
Section: ■ Experimental Sectionmentioning
confidence: 99%
“…9 , the octahedral CeO 2 in water is terminated with Ce–OH 2 + due to the positive zeta potential while the surface of the K9 wafer is Si–O − . 43 The opposite surface charge between K9 surface and the calcined octahedrons leads to a strong electrostatic attraction. Under certain pressure, Ce–OH 2 + on the surface of octahedrons will react with Si–O − to form Ce–O–Si bonds, thus weakening the Si–O–Si bonds on K9 surface layer.…”
Section: Resultsmentioning
confidence: 99%
“…During CMP, the OH groups on the ceria surface form strong Ce–O–Si bonds with Si–OH groups on the glass surface. The Ce–O–Si bonds are much stronger than Si–O–Si bonds, leading to the removal of SiO 2 . , Ce 3+ sites help the formation of Ce–OH groups at the CeO 2 surface through H 2 O dissociation and facilitate the breaking up of Si–O bonds during polishing. ,, From the perspective of the chemical effect of CMP, the surface Ce 3+ concentration of the products calcined at 800–900 °C is high and they should have better polishing performance.…”
Section: Resultsmentioning
confidence: 99%