Investigation of the effect of Sn doping on Al/Sn: ZnS/p-Si diode parameters with C–V and G/ω-V characteristics

In this study, it was aimed to produce an organic interface layered Schottky diode structure and frequency effect on capacitance-conductance-voltage measurements. In this context, phosphor doped n-type Si single crystal has been used as a semiconductor substrate with a 1-20 Ω.cm resistivity, (100) surface oriention, 2 inches in diameter and 350 μm thickness. The (E)-5,5-difluoro-1,3,7,9-tetramethyl-10-phenyl-2-(2-(pyridin-2-yl)vinyl)-5H-54,64-dipyrrolo [1,2-c:2',1'-f] [1,3,2] diazaborinine (BODIPY-Pyridine) thin film was coated on n-Si using the spin coating technique. Ohmic and rectifier contacts were coated by evaporation of indium (In) and gold (Au) using a thermal evaporation system and Au/ BODIPY-Pyridine/n-Si/In Schottky diode was fabricated. Capacitance-voltage (C-V) and conductance-voltage (G-V) measurements of this structure were gained at different frequencies in the dark. Contingent on the frequency, the series resistance (Rs) and the interface state density (Nss) values were identified by using the conductance and Hill-Coleman method, respectively.

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Investigation of the effect of Sn doping on Al/Sn: ZnS/p-Si diode parameters with C–V and G/ω-V characteristics

Cited by 2 publications

References 39 publications

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ZnS nanoparticles-tailored electric, magnetic and mechanical properties of nanocomposites

A Wide Frequency Range C-V and G-V Characteristics Study in Schottky Contacts with a BODIPY-Pyridine Organic Interface

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