Investigation of the Defect Chemistry of CuInSe2 Single Crystals by DLTS Measurements

Will ultrathin CIGS solar cells overtake the champion thin-film cells? Updated SCAPS baseline models reveal main differences between ultrathin and standard CIGS

“…Previous baseline models only consider one CIGS bulk defect to account for carriers recombination [12,22]. However, this study follows a different approach to CIGS deep bulk defects as they are addressed by reported defects [13,17,[64][65][66][67] both with theoretical and experimental evidence. The CIGS-based CuInSe 2 chalcopyrite semiconductor has several native point defects and the energy level values of many of such defects were calculated by Zhang et al [13] and compared with experimental findings.…”

“…The double donor In Cu and double acceptor Cu In antisite defects have two transition energy levels, below the conduction band minimum (E c ) and above the valence band maximum (E v ) energy levels, respectively [13,66,68]. The density of such double defects are experimentally reported elsewhere [13,64,65]. The experimental values for electron/hole cross-section (σ e/h ) for the same CIGS defects are scarce.…”