Investigation of the behaviour of the impurity atoms in Si by μ− SR-method

Mamedov, T. N.; Duginov, V. N.; Grebinnik, V. G.; Gritsaj, K. I.; Olshevsky, V. G.; Pomjakushin, Vladimir; Жуков, В. А.; Kirillov, B. F.; Nikolsky, B. A.; Pirogov, A. V.; Ponomarev, A. N.; Suetin, V. A.; Gorelkin, V. N.

doi:10.1007/bf02068969

Cited by 15 publications

(6 citation statements)

References 1 publication

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“…The temperature dependence of the relaxation rate and the precession-frequency shift of negative muon spin in n-and p-type silicon at temperatures below 30 K were observed in previous µ − SR experiments [4][5][6].…”

Section: Introductionmentioning

confidence: 57%

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Shallow acceptor centres in silicon studied by means of spin rotation of negative muons

Mamedov

Chaplygin

Duginov

et al. 1999

J. Phys.: Condens. Matter

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The residual polarization of negative muons has been studied for phosphorus-doped ([P]: 1.6 × 10 13 cm −3 ) and antimony-doped ([Sb]: 2 × 10 18 cm −3 ) silicon crystals. The measurements were carried out in a transverse magnetic field of 0.1 T over the temperature region 4 K-300 K. The ionized and neutral states of the µ Al pseudo-acceptor were observed in antimony-doped silicon for the first time. The rate of transition from the neutral to the ionized state of the acceptor was found to be equal to 1.2 × 10 6 s −1 over the temperature range 4 K-12 K. The estimated rates of relaxation of the magnetic moment of the acceptor-centre electron shell are 5 × 10 10 s −1 and 1.6×10 12 s −1 in phosphorus-doped silicon and 6×10 11 s −1 and 6.7×10 12 s −1 in antimony-doped silicon at 4 K and 15 K respectively. The experimental results obtained are interpreted in terms of spin-lattice relaxation of the acceptor magnetic moment and of the acceptor-donor pair formation.

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Section: Introductionmentioning

confidence: 57%

“…The behaviour of negative muon-polarization in this sample differs considerably from that in the other silicon samples investigated with different impurity types and concentrations [4][5][6]. The function describing muon spin polarization contains both damped and undamped components.…”

Section: Antimony-doped Siliconmentioning

confidence: 82%

Shallow acceptor centres in silicon studied by means of spin rotation of negative muons

Mamedov

Chaplygin

Duginov

et al. 1999

J. Phys.: Condens. Matter

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“…The possibility to extract valuable information about the hyperfine structure and interactions with a lattice of acceptor centers in different semiconductors with the help of negative muons was shown in the works [16][17][18][19]. Recently, µ − SRresearch of synthetic diamond crystals were carried out in [20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Evolution in Time of Radiation Defects Induced by Negative Pions and Muons in Crystals with a Diamond Structure

Belousov

2017

Crystals

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Evolution in time of radiation defects induced by negatively-charged pions and muons in crystals with diamond structures is considered. Negative pions and muons are captured by the nucleus and ionize an appropriate host atom, forming a positively-charged radiation defect in a lattice. As a result of an evolution in time, this radiation defect transforms into the acceptor center. An analysis of the full evolution process is considered for the first time. Formation of this acceptor center can be divided into three stages. At the first stage, the radiation defect interacts with a radiation trace and captures electrons. The radiation defect is neutralized completely in Si and Ge for a short time t ≤ 10 −11 s, but in diamond, the complete neutralization time is very large t ≥ 10 −6 s. At the second stage, broken chemical bonds of the radiation defect are restored. In Si and Ge, this process takes place for the neutral radiation defect, but in diamond, it goes for a positively-charged state. The characteristic time of this stage is t < 10 −8 s for Si and Ge and t < 10 −11 s for diamond. After the chemical bonds' restoration, the positively-charged, but chemically-bound radiation defect in diamond is quickly neutralized because of the electron density redistribution. The neutralization process is characterized by the lattice relaxation time. At the third stage, a neutral chemically-bound radiation defect captures an additional electron to saturate all chemical bonds and forms an ionized acceptor center. The existence of a sufficiently big electric dipolar moment leads to the electron capture. Qualitative estimates for the time of this process were obtained for diamond, silicon and germanium crystals. It was sown that this time is the shortest for diamond (≤10 −8 s) and the longest for silicon (≤10 −7 s)

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“…However, if a negative muon is in 1s ground state inside an atom with zero-spin nucleus, the whole system "atom+µ − " can be regarded as an acceptor center (see, e.g. [35]). The pseudonucleus "nucleus+µ − " has spin 1/2 and keeps a part of muons initial polarization.…”

Section: Muons In Mattermentioning

confidence: 99%

MuSR method and tomographic-probability representation of spin states

Belousov¹,

Filippov²,

Gorelkin³

et al. 2010

J Russ Laser Res

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Muon spin rotation/relaxation/resonance (MuSR) technique for studying matter structures is considered by means of a recently introduced probability representation of quantum spin states. A relation between experimental MuSR histograms and muon spin tomograms is established. Time evolution of muonium, anomalous muonium, and a muonium-like system is studied in the tomographic representation. Entanglement phenomenon of a bipartite muon-electron system is investigated via tomographic analogues of Bell number and positive partial transpose (PPT) criterion. Reconstruction of the muonelectron spin state as well as the total spin tomography of composed system is discussed.

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Investigation of the behaviour of the impurity atoms in Si by μ− SR-method

Cited by 15 publications

References 1 publication

Shallow acceptor centres in silicon studied by means of spin rotation of negative muons

Shallow acceptor centres in silicon studied by means of spin rotation of negative muons

Evolution in Time of Radiation Defects Induced by Negative Pions and Muons in Crystals with a Diamond Structure

MuSR method and tomographic-probability representation of spin states

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