Investigation of the barium strontium titanate films on the silicon substrate

Павлов, Д. П.; Баталов, Р. И.; Leontyev, A. V.; Жарков, Д. К.; Migachev, S. A.; Lunev, I. V.; Мухортов, В. М.; Shaposhnikova, T. S.; Мамин, Р. Ф.

doi:10.1080/00150193.2021.1888233

Cited by 4 publications

(6 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The second sample had the same thickness and composition, but with a sublayer of the same film with a thickness of 2.5 nm and deposited on a silicon substrate. The substrate was the single crystal p-type silicon with a resistivity of 12 Ohm/cm and crystallographic orientation (001) [ 42 ]. The third sample was an 800 nm thick BST film on a (111)-oriented MgO substrate.…”

Section: Methodsmentioning

confidence: 99%

“…The third sample was an 800 nm thick BST film on a (111)-oriented MgO substrate. The sample fabrication processes are described in more detail in [ 35 , 40 , 42 ]. The film thickness was measured using an MII-4 microinterferometer and also a Zeiss Supra-25 scanning electron microscope in the “cross-section” and AFM image of the end face of the etched film.…”

Section: Methodsmentioning

confidence: 99%

“…To solve these problems, transition layers based on simple oxides such as (Ba,Sr)TiO 3 [ 38 , 39 ] with a thickness of several nanometers are formed at the interface between the semiconductor and the ferroelectric [ 40 ]. In addition, depositing BST on silicon when creating solar cells enables a higher absorption of visible and ultraviolet radiation [ 41 , 42 ], which significantly increases their efficiency.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Resonant Excitation of the Ferroelectric Soft Mode by a Narrow-Band THz Pulse

Brekhov

Bilyk²,

Овчинников

et al. 2023

Nanomaterials

View full text Add to dashboard Cite

This study investigates the impact of narrow-band terahertz pulses on the ferroelectric order parameter in Ba0.8Sr0.2TiO3 films on various substrates. THz radiation in the range of 1–2 THz with the pulse width of about 0.15 THz was separated from a broadband pulse with the interference technique. The 375 nm thick BST film on a MgO (001) substrate exhibits enhanced THz-induced second harmonic generation when excited by THz pulses with a central frequency of 1.6 THz, due to the resonant excitation of the soft phonon mode. Conversely, the BST film on a Si (001) substrate shows no enhancement, due to its polycrystalline state. The 800 nm thick BST film on a MgO (111) substrate demonstrates the maximum of a second harmonic generation signal when excited by THz pulses at 1.8 THz, which is close to the soft mode frequency for the (111) orientation. Notably, the frequency spectrum of the BST/MgO (111) film reveals peaks at both the fundamental and doubled frequencies, and their intensities depend, respectively, linearly and quadratically on the THz pulse electric field strength.

show abstract

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Resonant Excitation of the Ferroelectric Soft Mode by a Narrow-Band THz Pulse

Brekhov

Bilyk²,

Овчинников

et al. 2023

Nanomaterials

View full text Add to dashboard Cite

show abstract

“…The third sample was an 800 nm thick BST film on a (111)-oriented MgO substrate. The sample fabrication processes are described in more detail in [35,40,42]. The film thickness was measured using an MII-4 microinterferometer and also a Zeiss Supra-25 scanning electron microscope in the "crosssection" and AFM image of the end face of the etched film.…”

Section: Methodsmentioning

confidence: 99%

Resonant Excitation of the Ferroelectric Soft Mode by a Narrow-Band THz Pulse

Brekhov¹,

Bilyk²,

Овчинников³

et al. 2023

Preprint

View full text Add to dashboard Cite

This study investigates the impact of narrow-band terahertz pulses on the ferroelectric order parameter in Ba0.8Sr0.2TiO3 films on various substrates. The 375 nm thick BST film on an MgO (001) substrate exhibits enhanced THz-induced second harmonic generation when excited by THz pulses with a central frequency of 1.6 THz, due to the resonant excitation of the soft phonon mode. Conversely, the BST film on a Si (001) substrate shows no enhancement, due to its polycrystalline state. The 800 nm thick BST film on an MgO (111) substrate demonstrates maximum of second harmonic generation signal when excited by THz pulses at 1.8 THz, that is also very close to it`s soft mode frequency (1.9 THz). Notably, the frequency spectrum of the BST/MgO (111) film reveals peaks at both the fundamental and doubled frequencies, highlighting the quadratic dependence of SHG intensity on the THz pulse's electric field strength.

show abstract

“…Dari berapa penelitian juga melaporkan suhu yang digunakan hingga 1300 o C [22][23][24][25] . Beberapa penelitian melaporakan bahwa metode ini menghasilkan banyak sekali algomerasi dengan ukuran butir pada rentang 2-5 µm dan impuritas yang tinggi yang menyebabkan buruknya sifat listrik dari material yang dihasilkan dari metode ini [26][27][28][29][30][31][32] .…”

Section: Metode Solid State Reactionunclassified

Tinjauan Pengembangan Material Berbasis Barium Titanat, Komposit PVDF/Batio3 Dan Batio3/Hap Untuk Aplikasi Electrostatic Dielectric Energy Storage Capacitor

Adnan,

Kurniawan,

Soegijono

2023

JRM

View full text Add to dashboard Cite

Barium titanate (BaTiO3) is ceramic material that is widely used in various applications..Electrostatic dielectric energy storage capacitor is one of the application of Barium titanate (BaTiO3) material. Composite materials based on barium titanate (BaTiO3) such as Polyvinylidene fluoride (PVDF)/BaTiO3 and BaTiO3/HAp Hydroxyapatite have been developed to improve the electrical properties of the materials. Many research have been reported hat barium titanate in nano phase has a maximum dielectric constant 5000 with particle size range of 30-50 nm. The addition of BaTiO3 composition as a filler to PVDF/BaTiO3 composite caused increasing of dielectric constant compared to the dielectric constant properties of the PVDF. Similar results also found on BaTiO3/HAp composite. From this review, it was also found that the composite of these three materials is a candidate for future material to improve the electrical properties of PVDF which have been applied to electrostatic dielectric energy storage capacitor applications.

show abstract

Investigation of the barium strontium titanate films on the silicon substrate

Cited by 4 publications

References 6 publications

Resonant Excitation of the Ferroelectric Soft Mode by a Narrow-Band THz Pulse

Resonant Excitation of the Ferroelectric Soft Mode by a Narrow-Band THz Pulse

Resonant Excitation of the Ferroelectric Soft Mode by a Narrow-Band THz Pulse

Tinjauan Pengembangan Material Berbasis Barium Titanat, Komposit PVDF/Batio3 Dan Batio3/Hap Untuk Aplikasi Electrostatic Dielectric Energy Storage Capacitor

Contact Info

Product

Resources

About