Investigation of the 22 inch hot zone simulation and experiment of the CZ silicon crystal growth process

Chung, Wen-Tai; Wu, Yuhou; Chen, Yu‐Chung; Wu, C.C.

doi:10.1109/pvsc.2011.6186379

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2016

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“…Previous experiments confirmed the correct predictions simulated by the software [6][7][8]. The main structure of the furnace is showed in Fig.…”

Section: Model Descriptionsupporting

confidence: 77%

Simulation ofV/GDuring Φ450 mm Czochralski Grown Silicon Single Crystal Growth Under the Different Crystal and Crucible Rotation Rates

Guan

Zhang

2016

MATEC Web Conf.

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Abstract. For discovering the principle of processing parameter combination for the stable growth and better wafer quality of ĭ450 mm Czochralski grown silicon single crystal (shortly called Cz silicon crystal), the effects of crystal rotation rate and crucible one on the V/G ratio were simulated by using CGSim software. The results show that their effect laws on the V/G ratio for ĭ450 mm Cz silicon crystal growth are some different from that for ĭ200 mm Cz silicon one, and the effects of crucible rotation rate are relatively smaller than that of crystal one and its increasing only makes the demarcation point between two regions with different V/G ratio variations outward move along radial direction, and it promotes the wafer quality to weaken crystal rotation rate and strengthen crucible one.

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“…Previous experiments confirmed the correct predictions simulated by the software [6][7][8]. The main structure of the furnace is showed in Fig.…”

Section: Model Descriptionsupporting

confidence: 77%

Simulation ofV/GDuring Φ450 mm Czochralski Grown Silicon Single Crystal Growth Under the Different Crystal and Crucible Rotation Rates

Guan

Zhang

2016

MATEC Web Conf.

View full text Add to dashboard Cite

show abstract

Investigation of the 22 inch hot zone simulation and experiment of the CZ silicon crystal growth process

Cited by 1 publication

References 14 publications

Simulation ofV/GDuring Φ450 mm Czochralski Grown Silicon Single Crystal Growth Under the Different Crystal and Crucible Rotation Rates

Simulation ofV/GDuring Φ450 mm Czochralski Grown Silicon Single Crystal Growth Under the Different Crystal and Crucible Rotation Rates

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