Uniform graphite microislands (GMs) are prepared through catalytic graphitization of amorphous carbon (a-C) thin film. Taking advantage of the specific structural feature of the GMs, we demonstrate an effective approach to improve the reliability of amorphous carbon based resistive random access memory devices. Through investigating the temperature dependence of the high/low resistance states (HRS/LRS), it is verified that the conductive filaments (CFs) prefer to grow along the GMs. The enhancement of localelectric-field around the GMs can not only induce a lower forming/set voltage to largely avoid CFs overgrowth, but also simplify the CFs morphology. As a result, the relative fluctuation of HRS/LRS resistance reduces from 82.8%/ 46.3% to 27.4%/18.8%, respectively. In addition, the memory devices with GMs structure exhibit a low cycling degradation and good retention (>10 4 s at 85 C).Resistive random access memory (RRAM) devices possess various superior performance including fast programming speed, low power consumption and high density, which makes it a promising candidate for next-generation non-volatile memory and neuromorphic computing. [1][2][3][4] A great many materials have been explored as switching media for RRAMs over the past decades, such as oxides, [5] nitrides, [6] chalcogenides, [7] organics, [8] and others. [9,10] It is widely accepted that the formation and rupture of conductive filaments (CFs) accounts for the physical mechanism of resistive switching (RS). [11][12][13] Thus, the location, diameter, and geometrical morphology of CFs could have a strong impact on RS parameters, even on memory devices performance. [14][15][16] However, the specific features of CFs are uncontrollable, because the migration of metal (electrochemical metallization mechanism, ECM) or oxygen (valence change mechanism, VCM) ions is highly random in the condition of uniform electric-field. [17,18] This would result in a large fluctuation of RS parameters, such as high/low resistance state (HRS/LRS) and switching voltages (V set /V reset ), which is a main obstacle for practical applications. [19][20][21] Therefore, controlling CFs is the core topic for improving the performance of RRAM devices.Based on the current understanding on the working mechanism of RRAM, the redox process during the formation and rupture process of CFs is closely dependent on the electric field. [22] While, the electric-field is uniform near the planar electrode/insulating layer interface, leading to the equal opportunity of ions migration, which is the physical reason of the CFs uncontrollability. Thus, electric-field localization has been proposed as an effective method for controlling CFs. Many attempts have been made to enhance the local electric field (LEF), such as inserting metal nanodots, [23] introducing nanoinsulators, [24] or using tip electrode. [13,25] These approaches effectively controlled the conductive filament growth, obtaining better RS performance. However, it is still necessary to apply multiple function materials develop mo...