Investigation of Temperature Dependence in the Dark Current of InAs Diode Detectors

Abstract

lnAs diode detectors are good for -3 pm wavelength detection and promising to operate at high temperature (T). In order to decrease the dark current at high T, we have studied the I-V characteristics of the PIN (S1066) and PN (SI 135) diodes, and concluded the dominant current mechanics at various T. The two diodes are grown on the lnAs N-type substrates. The doping densities of the P N diode are 3x10" and 6 . 7~1 0 '~ cm-' for P and N types res ctively, and the thickness of the intrinsic layer is 0.14 pm. Those of the PN diode are I x l O ' * cm" and IxlO'cm". The mesa shape of the diodes is a circle wlth a radius of I50 pm.The analysis of [he experimental results is based on the model of a tunnel diode[ I ] The solid and own symbols in Fig. I represent the results of the PIN and PN diodes respectively. At low T, the reverse current is