Abstract:lnAs diode detectors are good for -3 pm wavelength detection and promising to operate at high temperature (T). In order to decrease the dark current at high T, we have studied the I-V characteristics of the PIN (S1066) and PN (SI 135) diodes, and concluded the dominant current mechanics at various T. The two diodes are grown on the lnAs N-type substrates. The doping densities of the P N diode are 3x10" and 6 . 7~1 0 '~ cm-' for P and N types res ctively, and the thickness of the intrinsic layer is 0.14 pm. Tho… Show more
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