Abstract:Normal 0 false false false RU X-NONE X-NONE The combination of methods of voltammetry, Raman spectroscopy, and X-ray reflectometry for the first time has been applied for the more comprehensive investigation of interfacial boundaries of GaAs, i.e. determination of phase distribution and thickness of the phase layers. The conditions for the formation of elemental arsenic on a GaAs surface in the process of selective dissolution are discussed. The stability of interfacial boundaries in air has also been studied.… Show more
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