Investigation of surface-enhanced Raman spectroscopy on the substrates of telluride 2D material

Jiang, Chenxiao; Wei, Yanqiu; Zhao, Pengcheng; Wang, Peijie; Fang, Yan; Zhang, Lisheng

doi:10.1140/epjp/s13360-020-00688-y

Cited by 8 publications

(5 citation statements)

References 12 publications

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“…In Raman spectra of MSC/NiTe 2 (Figure 3b, Figure S11, Supporting Information), the peak at 72 cm −1 corresponding to NiTe 2 . [ 31 ] Peaks at 1335 cm −1 (D band) and 1580 cm −1 (G band) verified the presence of graphitic carbon. The D‐band/G‐band intensity ratio for MSC/P⊂NiTe 2− x (0.96) was lower than that for MSC/NiTe 2− x (1.00) and MSC/NiTe 2 (1.02), which enhanced the conductivities of the composites.…”

Section: Resultsmentioning

confidence: 96%

P‐Doped NiTe₂ with Te‐Vacancies in Lithium–Sulfur Batteries Prevents Shuttling and Promotes Polysulfide Conversion

et al. 2022

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Lithium–sulfur (Li–S) batteries have been hindered by the shuttle effect and sluggish polysulfide conversion kinetics. Here, a P‐doped nickel tellurium electrocatalyst with Te‐vacancies (P⊂NiTe2−x) anchored on maize‐straw carbon (MSC) nanosheets, served as a functional layer (MSC/P⊂NiTe2−x) on the separator of high‐performance Li–S batteries. The P⊂NiTe2−x electrocatalyst enhanced the intrinsic conductivity, strengthened the chemical affinity for polysulfides, and accelerated sulfur redox conversion. The MSC nanosheets enabled NiTe2 nanoparticle dispersion and Li+ diffusion. In situ Raman and ex situ X‐ray absorption spectra confirmed that the MSC/P⊂NiTe2−x restrained the shuttle effect and accelerated the redox conversion. The MSC/P⊂NiTe2−x‐based cell has a cyclability of 637 mAh g‐1 at 4 C over 1800 cycles with a degradation rate of 0.0139% per cycle, high rate performance of 726 mAh g‐1 at 6 C, and a high areal capacity of 8.47 mAh cm‐2 under a sulfur configuration of 10.2 mg cm‐2, and a low electrolyte/sulfur usage ratio of 3.9. This work demonstrates that vacancy‐induced doping of heterogeneous atoms enables durable sulfur electrochemistry and can impact future electrocatalytic designs related to various energy‐storage applications.

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Section: Resultsmentioning

confidence: 96%

P‐Doped NiTe₂ with Te‐Vacancies in Lithium–Sulfur Batteries Prevents Shuttling and Promotes Polysulfide Conversion

et al. 2022

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“…The position of the peak is in agreement with the previous reports on Raman scattering in NiTe 2 . 17,37,45 Figure 8h presents room-temperature Hall resistivity dependence on the magnetic field for the NiTe 2 layers grown at various growth temperatures (T s ). From the slope of ρ xy (B) close to B = 0, we obtain the Hall concentrations of electrons, from 10 20 to 10 23 cm −3 .…”

Section: ■ Experimental Resultsmentioning

confidence: 99%

Molecular Beam Epitaxy of a 2D Material Nearly Lattice Matched to a 3D Substrate: NiTe₂ on GaAs

Seredyński

Ogorzałek

Zajkowska

et al. 2021

Crystal Growth & Design

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The lattice mismatch between interesting 2D materials and commonly available 3D substrates is one of the obstacles in the epitaxial growth of monolithic 2D/3D heterostructures, but a number of 2D materials have not yet been considered for epitaxy. Here, we present the first molecular beam epitaxy growth of a NiTe2 2D transition-metal dichalcogenide. Importantly, the growth is realized on a nearly lattice-matched GaAs(111)B substrate. Structural properties of the grown layers are investigated by electron diffraction, X-ray diffraction, and scanning tunneling microscopy. Surface coverage and atomic-scale order are evidenced by images obtained with atomic force, scanning electron, and transmission electron microscopy. Basic transport properties were measured confirming that the NiTe2 layers are metallic, with a Hall concentration of 1020 to 1023 cm–3, depending on the growth conditions.

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“…In practical metallic SERS applications, both EMs and CMs usually co-occur on metal surfaces, while chemical enhancement factors are usually moderate (typically below 10 3 ) compared with those of EMs [28] , but do not suffer from the disadvantage of photothermal heat generation. It is worthwhile to note that some studies show that chemical enhancement factors could be significantly improved using dielectrics [29] , semiconductors [30] , or 2D materials [31] , offering us an unprecedented opportunity to develop and revolutionize plasmon-free SESR substrates.…”

Section: Mechanisms Of Sers I Sersmentioning

confidence: 99%

Surface-enhanced Raman spectroscopy chips based on two-dimensional materials beyond graphene

et al. 2021

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Surface-enhanced Raman spectroscopy (SERS) based on two-dimensional (2D) materials has attracted great attention over the past decade. Compared with metallic materials, which enhance Raman signals via the surface plasmon effect, 2D materials integrated on silicon substrates are ideal for use in the fabrication of plasmon-free SERS chips, with the advantages of outstanding fluorescence quenching capability, excellent biomolecular compatibility, tunable Fermi levels, and potentially low-cost material preparation. Moreover, recent studies have shown that the limits of detection of 2D-material-based SERS may be comparable with those of metallic substrates, which has aroused significant research interest. In this review, we comprehensively summarize the advances in SERS chips based on 2D materials. As several excellent reviews of graphene-enhanced Raman spectroscopy have been published in the past decade, here, we focus only on 2D materials beyond graphene, i.e., transition metal dichalcogenides, black phosphorus, hexagonal boron nitride, 2D titanium carbide or nitride, and their heterostructures. We hope that this paper can serve as a useful reference for researchers specializing in 2D materials, spectroscopy, and diverse applications related to chemical and biological sensing.

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Investigation of surface-enhanced Raman spectroscopy on the substrates of telluride 2D material

Cited by 8 publications

References 12 publications

P‐Doped NiTe₂ with Te‐Vacancies in Lithium–Sulfur Batteries Prevents Shuttling and Promotes Polysulfide Conversion

P‐Doped NiTe₂ with Te‐Vacancies in Lithium–Sulfur Batteries Prevents Shuttling and Promotes Polysulfide Conversion

Molecular Beam Epitaxy of a 2D Material Nearly Lattice Matched to a 3D Substrate: NiTe₂ on GaAs

Surface-enhanced Raman spectroscopy chips based on two-dimensional materials beyond graphene

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Investigation of surface-enhanced Raman spectroscopy on the substrates of telluride 2D material

Cited by 8 publications

References 12 publications

P‐Doped NiTe2 with Te‐Vacancies in Lithium–Sulfur Batteries Prevents Shuttling and Promotes Polysulfide Conversion

P‐Doped NiTe2 with Te‐Vacancies in Lithium–Sulfur Batteries Prevents Shuttling and Promotes Polysulfide Conversion

Molecular Beam Epitaxy of a 2D Material Nearly Lattice Matched to a 3D Substrate: NiTe2 on GaAs

Surface-enhanced Raman spectroscopy chips based on two-dimensional materials beyond graphene

Contact Info

Product

Resources

About

P‐Doped NiTe₂ with Te‐Vacancies in Lithium–Sulfur Batteries Prevents Shuttling and Promotes Polysulfide Conversion

P‐Doped NiTe₂ with Te‐Vacancies in Lithium–Sulfur Batteries Prevents Shuttling and Promotes Polysulfide Conversion

Molecular Beam Epitaxy of a 2D Material Nearly Lattice Matched to a 3D Substrate: NiTe₂ on GaAs