Investigation of Subthreshold Characteristics of Negative Capacitance Single-Active Layer Double-Gate (NC-SALDG) Thin-Film Transistor (TFT)

Moparthi, Sandeep; Lavudi, Ramesh; Suddapalli, Subba Rao; Saramekala, Gopi Krishna

doi:10.1007/s12633-020-00932-1

Cited by 1 publication

(1 citation statement)

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“…In recent years, amorphous oxide semiconductor has been widely investigated in the field of thin film transistors (TFTs) due to its low cost, low temperature preparation process, and large-scale production. [1][2][3] In these amorphous oxide semiconductors, In 2 O 3 TFTs manifest extremely high mobility with large threshold voltage (V th ) offset and low on/off current ratio, [4,5] which is averse to the overall function of the device. Fortunately, the capability of In 2 O 3 TFTs can be improved by doping.…”

Section: Introductionmentioning

confidence: 99%

High Performance Amorphous IGO Thin Film Transistors Grown at Low Temperature

Peng,

He,

Huang

et al. 2024

Physica Rapid Research Ltrs

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Polycrystalline indium gallium oxide has been widely studied in the domain of oxide thin film transistors (TFTs) due to its high mobility. However, there are few researches focus on amorphous IGO (a‐IGO), which has the advantage of large area display. Herein, high‐performance a‐IGO TFTs are demonstrated by magnetron sputtering method with simple process. The efficiency of a‐IGO TFTs fabricated under various conditions are evaluated, and a‐IGO TFTs prepared by 27 nm thin films grown at 220 °C have the best electrical properties. It exhibits the mobility of 35 cm2 V‐1 s‐1, threshold voltage of 0.5 V, subthreshold swing of 0.8 V/dec, and the on/off current ratio over 106. This is due to the precise control of the deposition energy state by temperature during sputtering and the influence of the semiconductor layer thickness on the distribution of the accumulation layer. The results present here demonstrate a simple fabrication method for high‐performance amorphous oxide thin film transistors, providing a new option for display driver circuits.This article is protected by copyright. All rights reserved.

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