Investigation of structural, morphology, and conduction mechanism of GO–Fe3O4–TiO2 composite material

Ateş, Ayten; brahim, Khawla ben; Çakmak, Neşe Keklikçioğlu; Oueslati, Abderrazek; Gargouri, Mohamed

doi:10.1007/s10854-023-11126-x

Cited by 1 publication

(1 citation statement)

References 42 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The first peak at 637 nm is associated with the transition from the 3 A 2 (3F) ground term to the 3 E(3F) excited state, while the second peak at around 668 nm is assigned to transitions from 3 A 2 (3F) ground term to the 3 E(3P). 54 …”

Section: Resultsmentioning

confidence: 99%

A Nickel-Based Semiconductor Hybrid Material with Significant Dielectric Constant for Electronic Capacitors

Abid,

Mjejri,

Oueslati

et al. 2024

ACS Omega

Self Cite

View full text Add to dashboard Cite

A novel semiconducting Ni(II)-based hybrid material with the formula (C 7 H 12 N 2 ) NiCl 4 , which exhibits interesting optical and electrical properties, is reported. The crystal structure was investigated using SCXRD, whereas physical properties were studied by means of thermal analysis, Ft-Infrared, optical, and electrical measurements. Its crystal packing is formed through organic rings surrounded by inorganic [NiCl 4 ] 2− tetrahedral and stacked along the a-crystallographic axis. This arrangement is stabilized by a dense network of intermolecular hydrogen bonds. The investigated compound displayed a wide absorption range across the visible spectrum, characterized by an optical gap energy of 2.64 eV, indicating its semiconducting nature and efficient sunlight absorption capabilities across various wavelengths. Such features are of utmost importance in achieving a high energy conversion efficiency in solar cell applications. Further analyses of the thermal behavior using differential scanning calorimetry revealed a single-phase transition occurring at around 413 K, which was further confirmed through electrical measurements. A deep investigation of the electric and dielectric performances demonstrated a significant dielectric constant (ε′ ∼ 10 4 ) at low frequencies and low dielectric loss at high frequencies. Thus, it highlights its exceptional dielectric potential, particularly in applications related to electronic capacitors.

show abstract

Section: Resultsmentioning

confidence: 99%