2008
DOI: 10.1016/j.tsf.2007.12.022
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Investigation of sputter-deposited TiO2 thin film for the fabrication of dye-sensitized solar cells

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Cited by 48 publications
(22 citation statements)
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“…A relative high current density has been obtained for a 3 m thickness TiO 2 nanorod arrays, as shown in Figure 8, comparing to the results obtained by sputtering technique in the literature. [12][13][14][15][16][17][18][19] A short-circuit photocurrent density (J sc of 12.76 mA/cm 2 , an open-circuit voltage (V oc of 0.65 V, a fill factor (FF) of 0.63 and a photoelectron conversion efficiency ( of 5.25% are obtained for the DSSC using this nanorod arrays as an electrode material. It is the highest conversion efficiency until now has been obtained for TiO 2 films prepared by sputtering technique without any post-deposition treatments.…”
Section: Resultsmentioning
confidence: 99%
“…A relative high current density has been obtained for a 3 m thickness TiO 2 nanorod arrays, as shown in Figure 8, comparing to the results obtained by sputtering technique in the literature. [12][13][14][15][16][17][18][19] A short-circuit photocurrent density (J sc of 12.76 mA/cm 2 , an open-circuit voltage (V oc of 0.65 V, a fill factor (FF) of 0.63 and a photoelectron conversion efficiency ( of 5.25% are obtained for the DSSC using this nanorod arrays as an electrode material. It is the highest conversion efficiency until now has been obtained for TiO 2 films prepared by sputtering technique without any post-deposition treatments.…”
Section: Resultsmentioning
confidence: 99%
“…These properties were systematically varied by adjusting the following deposition parameters: deposition time, pressure, target current and substrate bias voltage. This in turn results in a higher deposition rate [24]. Fig.…”
Section: Resultsmentioning
confidence: 99%
“…This can be achieved by adjusting the amounts of dye and/or electrodes film thicknesses. In this work, the potential of magnetron sputtering as a technique for depositing [24] concluded that DSSC with TiO 2 electrode deposited at higher sputtering pressure exhibited an increase in photoelectron conversion efficiency. These findings led us to consider magnetron sputtering as a feasible technique for the preparation of NiO x coatings.…”
Section: Introductionmentioning
confidence: 92%
“…Moreover, NiO x is considered as a model semiconductor substrate due to its wide band-gap energy range from 3.6 to 4.0 eV depending on the amount of Ni(III) sites [15]. NiO x films have been fabricated by various techniques which include spin coating, dipping, electrochemical deposition [17], magnetron sputtering [18][19][20] and sol-gel [21][22][23][24][25]. With the exception of electrochemical techniques, the other deposition methods require subsequent thermal treatments in order to enhance the density of the coatings [21][22][23][24][25][26], to obtain crystalline structure in the as deposited sputtered coatings [26] and to remove the binder in the case of sol-gel deposited coatings [21][22][23][24][25].…”
Section: Introductionmentioning
confidence: 99%